Single-step metal-insulator transition in thin film-based vanadium dioxide nanowires with a 20 nm electrode gap

Tsuji Yoshihide; Kanki Teruo; Murakami Yasukazu; Tanaka Hidekazu

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Single-step metal-insulator transition in thin film-based vanadium dioxide nanowires with a 20 nm electrode gap

机译：电极间隙为20 nm的基于薄膜的二氧化钒纳米线中的单步金属-绝缘体转变

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We demonstrated a single resistance jump with orders of magnitude changes caused by a metal-insulator transition (MIT) in one domain in single-crystal VO2 nanowires with a 20 nm electrode gap. The nanowires were prepared from VO2 thin films on TiO2 (001) substrates and can provide numerous devices on a monolithic substrate using desired designs with precise positioning. The transport behavior of a single domain provides a simple understanding of the MIT and will apply an effective homogeneous electric field to a VO2 channel, aiding the development of Mott field-effect transistors and other devices using electronic phase changes. (C) 2019 The Japan Society of Applied Physics

机译：我们展示了一个单电阻跃迁，其数量级变化是由电极间隙为20 nm的单晶VO2纳米线中一个域中的金属-绝缘体跃迁（MIT）引起的。纳米线由TiO2（001）衬底上的VO2薄膜制备而成，并且可以使用所需的设计和精确的定位在单块衬底上提供大量器件。单个域的传输行为提供了对MIT的简单理解，并将有效的均匀电场施加到VO2通道，从而有助于开发使用电子相变的Mott场效应晶体管和其他器件。（C）2019日本应用物理学会

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《Applied physics express》 |2019年第2期|025003.1-025003.4|共4页
作者
Tsuji Yoshihide; Kanki Teruo; Murakami Yasukazu; Tanaka Hidekazu;
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Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan;

Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan;

Kyushu Univ, Dept Appl Quantum Phys & Nucl Engn, Fukuoka, Fukuoka 8190395, Japan|Kyushu Univ, Ultramicroscopy Res Ctr, Fukuoka, Fukuoka 8190395, Japan;

Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan;

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1. High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes [J] . Leroy J. Applied Physics Letters . 2012,第21期

机译：纳米间隙电极上的电脉冲电压引起的二氧化钒薄膜中的高速金属-绝缘体转变
2. High-speed metal-insulator transition in vanadium dioxide films induced by an electrical pulsed voltage over nano-gap electrodes [J] . J. Leroy, A. Crunteanu, A. Bessaudou, Applied Physics Letters . 2012,第21期

机译：纳米间隙电极上的电脉冲电压引起的二氧化钒薄膜中的高速金属-绝缘体转变
3. The effect of oxygen flow rate on metal-insulator transition (MIT) characteristics of vanadium dioxide (VO_2) thin films by pulsed laser deposition (PLD) [J] . Bukhari Syed A., Kumar Sooraj, Kumar Pawan, Applied Surface Science . 2020,第Nova1期

机译：脉冲激光沉积（PLD）对二氧化钒（VO_2）薄膜（PLD）的氧气流速对金属 - 绝缘体转变（MIT）特性的影响
4. Generation of terahertz radiation in thin vanadium dioxide films undergoing metal-insulator phase transition [C] . Solyankin Petr M., Esaulkov Mikhail N., Sidorov Artem Yu, International Conference on Infrared, Millimeter, and Terahertz Waves . 2015

机译：经历金属-绝缘体相变的二氧化钒薄膜中太赫兹辐射的产生
5. Hydrogen Doping and the Metal-Insulator Phase Transition in Vanadium Dioxide [D] . Ji, Heng. 2015

机译：氢掺杂和二氧化钒中的金属 - 绝缘相变
6. Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide [O] . Jamie M. Booth, Daniel W. Drumm, Phil S. Casey, -1

机译：关联M1二氧化钒的金属-绝缘体跃迁的能量和原子运动
7. Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited Vanadium Dioxide Thin Films [O] . Tadjer, Marko J., Wheeler, Virginia D., Downey, Brian P., 2016

机译：温度场和电场诱导金属 - 绝缘子转变原子层沉积二氧化钒薄膜
8. Mesoscopic Effects and Metal-Insulator Transition in Vanadium Oxide Nanowires. [R] . Cobden, D. H. 2012

机译：钒氧化物纳米线的介观效应和金属绝缘体转变。

Single-step metal-insulator transition in thin film-based vanadium dioxide nanowires with a 20 nm electrode gap

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