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The elastic microstructures of inkjet printed polydimethylsiloxane as the patterned dielectric layer for pressure sensors

机译：喷墨印刷的聚二甲基硅氧烷的弹性微结构作为压力传感器的图案化介电层

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摘要

A direct inkjet printing process was developed to fabricate patterned elastic microstructures for pressure sensors using n-butyl acetate diluted polymethylsiloxane (PDMS). The diluted PDMS precursor mixture with a cross-linker exhibited a controllable viscosity below 14 cP in 48 h at 25 °C, and the PDMS film had lower elastic modulus and hardness values than the non-diluted PDMS precursor after curing. The capacitor using the printed PDMS film as the microstructured dielectric layer showed a very high pressure sensitivity of up to 10.4 kPa~(-1) under the pressure below 70 Pa, and the pressure sensitivity would be dramatically decreased to 0.043-0.052 kPa~(-1) under the pressure between 2 and 8 kPa. Furthermore, the triboelectric sensors could be structured with an inkjet printed PDMS film and controllably generate the voltage signals up to 1.23 V without any amplification. The results suggest that mechanical properties and patterned elastic microstructures play the key roles in PDMS-based sensor devices, and the PDMS dielectric layer with controlled mechanical properties and microstructures fabricated via directly inkjet printing opens up the applications of the PDMS and its composites in functional devices.
机译：开发了一种直接喷墨印刷工艺，以使用乙酸正丁酯稀释的聚甲基硅氧烷（PDMS）制造用于压力传感器的图案化弹性微结构。具有交联剂的稀释的PDMS前体混合物在25°C下48小时内可控制的粘度低于14 cP，并且固化后的PDMS膜的弹性模量和硬度值低于未稀释的PDMS前体。使用印刷的PDMS膜作为微结构介电层的电容器在低于70 Pa的压力下显示出高达10.4 kPa〜（-1）的非常高的压力敏感度，并且压力敏感度将显着降低至0.043-0.052 kPa〜（ -1）在2至8 kPa之间的压力下。此外，摩擦电传感器可以由喷墨印刷的PDMS膜构成，并且可控制地生成高达1.23 V的电压信号，而无需任何放大。结果表明，机械性能和带图案的弹性微结构在基于PDMS的传感器设备中起着关键作用，而具有可控制机械性能和通过直接喷墨打印制造的微结构的PDMS介电层则开启了PDMS及其复合材料在功能性设备中的应用。 。

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  • 来源
    《Applied Physics Letters》 |2017年第26期|261904.1-261904.4|共4页
  • 作者

    Yongyi Peng; Shugang Xiao; Junliang Yang; Jian Lin; Wei Yuan; Weibing Gu; Xinzhou Wu; Zheng Cui;

  • 作者单位

    Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics,Central South University, Changsha 410083, China;

    Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics,Central South University, Changsha 410083, China,Printable Electronics Research Centre, Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123,People's Republic of China;

    Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics,Central South University, Changsha 410083, China;

    Printable Electronics Research Centre, Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123,People's Republic of China;

    Printable Electronics Research Centre, Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123,People's Republic of China;

    Printable Electronics Research Centre, Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123,People's Republic of China;

    Printable Electronics Research Centre, Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123,People's Republic of China;

    Printable Electronics Research Centre, Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123,People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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