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首页> 外文期刊>Applied Physics Letters >Enhanced ferro- and piezoelectric performances through interface control in BiFe_(0.99)W_(0.01)O_3/BiFe_(0.95)Mn_(0.05)O_3/BiFe_(0.99)W_(0.01)O_3 thin film
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Enhanced ferro- and piezoelectric performances through interface control in BiFe_(0.99)W_(0.01)O_3/BiFe_(0.95)Mn_(0.05)O_3/BiFe_(0.99)W_(0.01)O_3 thin film

机译：通过界面控制BiFe_（0.99）W_（0.01）O_3 / BiFe_（0.95）Mn_（0.05）O_3 / BiFe_（0.99）W_（0.01）O_3薄膜增强了铁和压电性能

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摘要

By eliminating domain backswitching, the severe aging problem of BiFe_(0.95)Mn_(0.05)O_3, as a volume effect, was solved through an interface control method. A BiFe_(0.95)Mn_(0.05)O_3 thin film sandwiched by BiFe_(0.99)W_(0.01)O_3 layers (BiFe_(0.99)W_(0.01)O_3/BiFe_(0.95)Mn_(0.05)O_3/BiFe_(0.99)W_(0.01)O_3) was prepared on a Pt(111)/Ti/SiO_2/Si substrate using a metal organic decomposition method. BiFeO_3, BiFe_(0.95)Mn_(0.05)O_3, BiFe_(0.99)W_(0.01)O_3, (top)BiFe_(0.99)W_(0.01)O_3/BiFe_(0.95)Mn_(0.05)O_3, and BiFe_(0.95)Mn_(0.05)O_3/BiFe_(0.99)W_(0.01)O_3(bottom) films were fabricated for comparison. All the films show well-saturated and rectangular hysteresis loops. Most importantly, the BiFe_(0.99)W_(0.01)O_3/BiFe_(0.95)Mn_(0.05)O_3/BiFe_(0.99)W_(0.01)O_3 film exhibits the largest piezoresponse (∼220 pm/V). This interface control method, by inhibiting the nucleation of domains with the opposite direction at the interfaces, opens up a promisingly feasible way to solve the aging problem of ferroelectric films and to achieve desired ferroelectric and piezoelectric properties.
机译：通过消除域反向切换，通过界面控制方法解决了BiFe_（0.95）Mn_（0.05）O_3作为体积效应的严重老化问题。夹在BiFe_（0.99）W_（0.01）O_3层之间的BiFe_（0.95）Mn_（0.05）O_3薄膜（BiFe_（0.99）W_（0.01）O_3 / BiFe_（0.95）Mn_（0.05）O_3 / BiFe_（0.99）W_使用金属有机分解方法在Pt（111）/ Ti / SiO_2 / Si衬底上制备了（0.01）O_3）。 BiFeO_3，BiFe_（0.95）Mn_（0.05）O_3，BiFe_（0.99）W_（0.01）O_3，（顶部）BiFe_（0.99）W_（0.01）O_3 / BiFe_（0.95）Mn_（0.05）O_3和BiFe_（0.95）制作Mn_（0.05）O_3 / BiFe_（0.99）W_（0.01）O_3（底部）膜用于比较。所有影片均显示出饱和度良好且呈矩形的磁滞回线。最重要的是，BiFe_（0.99）W_（0.01）O_3 / BiFe_（0.95）Mn_（0.05）O_3 / BiFe_（0.99）W_（0.01）O_3膜表现出最大的压电响应（〜220 pm / V）。这种界面控制方法通过抑制界面处方向相反的畴的成核，为解决铁电薄膜的老化问题并实现所需的铁电和压电性能开辟了一种有希望的可行方法。

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  • 来源
    《Applied Physics Letters》 |2017年第6期|062902.1-062902.5|共5页
  • 作者

    Jiang Xiaomei; Yan Jing; Hu Guangda;

  • 作者单位

    School of Materials Science and Engineering, University of Jinan, Jinan, China;

    School of Materials Science and Engineering, University of Jinan, Jinan, China,College of Physics and Electronic Engineering, Qilu Normal University, Jinan, China;

    School of Materials Science and Engineering, University of Jinan, Jinan, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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