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首页> 外文期刊>Applied Physics Letters >Intrinsic defect-mediated conduction and resistive switching in multiferroic BiFeO_3 thin films epitaxially grown on SrRuO_3 bottom electrodes
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Intrinsic defect-mediated conduction and resistive switching in multiferroic BiFeO_3 thin films epitaxially grown on SrRuO_3 bottom electrodes

机译:SrRuO_3底部电极外延生长的多铁性BiFeO_3薄膜的内在缺陷介导的传导和电阻转换

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摘要

We report the impact of intrinsic defects in epitaxial BiFeO_3 films on charge conduction and resistive switching of Pt/BiFeO_3/SrRuO_3 capacitors, although the BiFeO_3 films show very similar ferroelectric domain types probed by piezoresponse force microscopy. Capacitors with p-type Bi-deficient and n-type Bi-rich BiFeO_3 films exhibit switchable diode and conventional bipolar resistive switching behaviors, respectively. Both the capacitors show good retention properties with a high ON/OFF ratio of MOO in Bi-deficient films and that of >1000 in Bi-rich films. The present investigation advances considerably understanding of interface control through defect engineering of BiFeO_3 thin films for non-volatile memory application.
机译:我们报告了外延BiFeO_3薄膜中的固有缺陷对Pt / BiFeO_3 / SrRuO_3电容器的电荷传导和电阻切换的影响,尽管BiFeO_3薄膜显示出由压电响应力显微镜探测到的非常相似的铁电畴类型。具有p型Bi缺陷和n型Bi富BiFeO_3膜的电容器分别表现出可切换的二极管和常规的双极电阻切换行为。两种电容器均显示出良好的保持性能,在Bi缺陷薄膜中MOO的开/关比高,在Bi富含薄膜中MOO的开/关比大于1000。本研究通过对BiFeO_3薄膜进行非易失性存储器应用的缺陷工程,大大提高了对界面控制的理解。

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  • 来源
    《Applied Physics Letters》 |2016年第11期|112902.1-112902.5|共5页
  • 作者单位

    Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, South Korea;

    Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, South Korea;

    Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, South Korea;

    Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, South Korea;

    Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, South Korea;

    Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, South Korea;

    Korea Research Institute of Standards Science, Daejeon 305-304, South Korea;

    School of Materials Science and Engineering, Changwon National University, Gyeongnam 641-773, South Korea;

    School of Materials Science and Engineering, Changwon National University, Gyeongnam 641-773, South Korea;

    Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, South Korea;

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