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The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy

机译：透射电子显微镜对单层In（Ga）N量子阱光发射的理论与实验差异

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摘要

Quantitative high resolution transmission electron microscopy studies of intentionally grown 7InNGaN short-period superlattices (SLs) were performed. The structures were found to consist of an In_xGa_(1-x)N monolayer with an Indium content of x = 0.33 instead of the intended x = 1. Self-consistent calculations of the band structures of 1In_(0.33)Ga_(0.67)NGaN SLs were carried out, including a semi-empirical correction for the band gaps. The calculated band gap, E_g, as well as its pressure derivative, dE_g/dp, are in very good agreement with the measured photoluminescence energy, E_(PL), and its pressure derivative, dE_(PL)/dp, for a series of 1In_(0.33)Ga_(0.67)NGaN samples with n ranging from 2 to 40. This resolves a discrepancy found earlier between measured and calculated optical emission properties, as those calculations were made with the assumption of a 1InNGaN SL composition.
机译：对故意生长的7InN / nGaN短周期超晶格（SLs）进行了高分辨率的高分辨率透射电子显微镜研究。发现该结构由铟含量为x = 0.33而不是预期的x = 1的In_xGa_（1-x）N单层组成。1In_（0.33）Ga_（0.67）N的能带结构的自洽计算进行了/ nGaN SL，包括对带隙的半经验校正。计算出的带隙E_g及其压力导数dE_g / dp与一系列测量的光致发光能量E_（PL）及其压力导数dE_（PL）/ dp非常吻合具有2到40的n的1In_（0.33）Ga_（0.67）N / nGaN样品。这解决了较早发现的测量和计算的光发射特性之间的差异，因为这些计算是在1InN / nGaN SL成分的假设下进行的。

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  • 来源
    《Applied Physics Letters》 |2014年第18期|182103.1-182103.4|共4页
  • 作者

    T. Suski; T. Schulz; M. Albrecht; X. Q. Wang; I. Gorczyca; K. Skrobas; N. E. Christensen; A. Svane;

  • 作者单位

    Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw, Poland;

    Leibniz Institute for Crystal Growth, 1248 Berlin, Germany;

    Leibniz Institute for Crystal Growth, 1248 Berlin, Germany;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Beijing, China;

    Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw, Poland;

    Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw, Poland;

    Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark;

    Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C, Denmark;

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