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首页> 外文期刊>Applied Physics Letters >High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrO_x dielectric
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High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrO_x dielectric

机译：使用超薄溶液处理的ZrO_x电介质的高性能全非晶双层金属氧化物薄膜晶体管

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摘要

In this study, we report high-performance amorphous In_2O_3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using an ultra-thin solution-processed amorphous ZrO_x dielectric. A thin layer of In_2O_3 offers a higher carrier concentration, thereby maximizing the charge accumulation and yielding high carrier mobility. A thick amorphous layer of InZnO controls the charge conductance resulting in low off-state current and suitable threshold voltage. As a consequence, the BMO TFT showed higher filed-effect mobility (37.9 cm~2/V s) than single-layer InZnO TFT (7.6 cm~2/V s). Apart from that we obtain an on/off current ratio of 10~9, a subthreshold swing voltage of 120mV/decade, and a voltage shift ≤ 0.4 V under positive bias stress for 2.5 h, for a gate voltage of 3 V and drain voltage of 1V. These data demonstrate that the BMO TFT has great potential for a broad range of applications as switching low-power transistors.
机译：在这项研究中，我们报告了使用超薄溶液处理的非晶ZrO_x电介质的高性能非晶In_2O_3 / InZnO双层金属氧化物（BMO）薄膜晶体管（TFT）。 In_2O_3的薄层提供较高的载流子浓度，从而使电荷积累最大化并产生高的载流子迁移率。厚的InZnO非晶层控制电荷电导，从而产生低的关态电流和合适的阈值电压。结果，BMO TFT的场效应迁移率（37.9 cm〜2 / V s）比单层InZnO TFT（7.6 cm〜2 / V s）高。除此之外，对于3V的栅极电压和漏极电压，在正偏置应力下2.5h时，我们获得的开/关电流比为10〜9，亚阈值摆幅电压为120mV / decade，电压偏移≤0.4V。 1V。这些数据表明，BMO TFT作为开关低功率晶体管具有广阔的应用前景。

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  • 来源
    《Applied Physics Letters》 |2014年第11期|113509.1-113509.5|共5页
  • 作者

    G. X. Liu; A. Liu; F. K. Shan; Y. Meng; B. C. Shin; E. Fortunato; R. Martins;

  • 作者单位

    College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;

    College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;

    College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;

    College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;

    Electronic Ceramics Center, Dong-Eui University, Busan 614-714, South Korea;

    Department of Materials Science/CENIMAT-I3N, Faculty of Science and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal;

    Department of Materials Science/CENIMAT-I3N, Faculty of Science and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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