Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers

著录项

• 来源
  《Applied Physics Letters》 |2012年第23期|232401.1-232401.4|共4页
• 作者

  D. K. Kim; J. U. Cho; B. S. Chun; K. H. Shin; K. J. Lee; M. Tsunoda; M. Takahashi; Y. K.Kim;

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• 作者单位

  Department of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea;

  Department of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea;

  Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea;

  Korea Institute of Science and Technology, Seoul 136-791, South Korea;

  Department of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea;

  Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan;

  Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan;

  Department of Materials Science and Engineering, Korea University, Seoul 136-713, South Korea;

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• 正文语种 eng
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