Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

V. Hung Nguyen; F. Mazzamuto; J. Saint-Martin; A. Bournel; P. Dollfus

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Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

机译：石墨烯纳米带p-n异质结中负电导的巨大效应

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摘要

The I-V characteristics of graphene nanoribbon (GNR) p-n junctions have been investigated using atomistic quantum simulation. On the basis of results obtained for simple armchair GNR structures with large bandgap, it is suggested to improve significantly the device operation by inserting a small-bandgap section in the transition region between n and p zones. A giant peak-to-valley ratio (PVR) of negative differential conductance (higher than 10~3) can be achieved in such hetero-junctions. Additionally, the PVR is proved to be weakly sensitive to the transition length and not strongly degraded by the edge disorder, which is an important feature regarding applications.

机译：使用原子量子模拟研究了石墨烯纳米带（GNR）p-n结的I-V特性。根据简单的具有大带隙的扶手椅式GNR结构获得的结果，建议通过在n和p区域之间的过渡区域中插入一个小带隙部分来显着改善设备操作。在这种异质结中，可以实现负差分电导（大于10〜3）的巨大峰谷比（PVR）。此外，事实证明，PVR对过渡长度不敏感，并且不会因边缘紊乱而严重退化，这是有关应用的重要特征。

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来源
《Applied Physics Letters》 |2011年第4期|p.042105.1-042105.3|共3页
作者
V. Hung Nguyen; F. Mazzamuto; J. Saint-Martin; A. Bournel; P. Dollfus;
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作者单位

Institut d'Electronique Fondamentale, UMR8622, CNRS, University Paris Sud 11, 91405 Orsay, France,Center for Computational Physics, Institute of Physics, VAST, P.O. Box 429 Bo Ho, Hanoi 10000, Vietnam;

Institut d'Electronique Fondamentale, UMR8622, CNRS, University Paris Sud 11, 91405 Orsay, France;

Institut d'Electronique Fondamentale, UMR8622, CNRS, University Paris Sud 11, 91405 Orsay, France;

Institut d'Electronique Fondamentale, UMR8622, CNRS, University Paris Sud 11, 91405 Orsay, France;

Institut d'Electronique Fondamentale, UMR8622, CNRS, University Paris Sud 11, 91405 Orsay, France;

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机译：掺杂石墨烯纳米带p-n器件引起的负微分电阻和整流性能
3. Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions [J] . V. Hung Nguyen, A. Bournel, P. Dollfus Journal of Applied Physics . 2011,第9期

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机译：石墨烯中的电子传输：p-n结，散粒噪声和纳米带。
6. Perfect spin filtering effect and negative differential behavior in phosphorus-doped zigzag graphene nanoribbons [O] . Fei Zou, Lin Zhu, Kailun Yao -1

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7. Large peak-to-valley ratio of negative-differential-conductance in graphene p-n junctions [O] . Nguyen, V. Hung, Bournel, A., Dollfus, P. 2011

机译：负 - 微分 - 电导的大峰谷比石墨烯p-n结

Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions

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