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High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells

机译:用于晶体硅异质结太阳能电池的高质量纳米晶立方碳化硅发射极

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摘要

We developed a highly transparent n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter for crystalline silicon (c-Si) heterojunction solar cells. A low emitter saturation current density (J_(0e)) of 1.4 ×10~1 fA/cm~2 was obtained under optimal deposition conditions. A c-Si heterojunction solar cell fabricated on a p-type c-Si wafer without texturing showed an active area efficiency of 17.9% [open-circuit voltage (V_(oc))=0.668 V, short-circuit current density (J_(sc)) = 36.7 mA/cm~2, fill factor=0.731]. The high J_(sc) value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).
机译:我们开发了用于晶体硅(c-Si)异质结太阳能电池的高度透明的n型氢化纳米晶立方碳化硅(nc-3C-SiC:H)发射极。在最佳沉积条件下,获得了1.4×10〜1 fA / cm〜2的低发射极饱和电流密度(J_(0e))。在没有纹理化的p型c-Si晶片上制造的c-Si异质结太阳能电池显示17.9%的有效面积效率[开路电压(V_(oc))= 0.668 V,短路电流密度(J_( sc))= 36.7 mA / cm〜2,填充系数= 0.731]。高的J_(sc)值与短波长(<500 nm)的出色量子效率相关。

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  • 来源
    《Applied Physics Letters》 |2010年第2期|P.023504.1-023504.3|共3页
  • 作者单位

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

    Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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