Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias

Keda Wang; Daxing Han; Guozhen Yue; Baojie Yan; Jeffrey Yang; Subhendu Guha

首页> 外文期刊>Applied Physicsletters >Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias

【24h】

Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias

机译：反向电偏压下光致氢化纳米晶硅太阳能电池非辐射复合中心的增加

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We studied photoluminescence (PL) of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells in the annealed and light-soaked states under various electric biases during light soaking. PL intensity from grain boundaries decreased after light soaking under a reverse bias, which implies a reduction in the radiative recombination rate as a consequence of an increase in nonradiative recombination centers in grain-boundary regions. However, such PL change was not observed after light soaking under open-circuit condition. The results suggest that the reverse bias during light soaking enhanced metastable defect generation in the grain-boundary regions, which is consistent with the explanation in our previous nc-Si:H cell stability studies.

机译：我们研究了在光浸泡期间，在各种电偏压下，处于退火和光浸泡状态的氢化纳米晶硅（nc-Si：H）太阳能电池的光致发光（PL）。在反向偏压下光浸泡后，来自晶界的PL强度降低，这意味着由于晶界区域中非辐射复合中心的增加，导致辐射复合率降低。然而，在开路条件下浸光后未观察到这种PL变化。结果表明，光浸泡过程中的反向偏压增强了晶界区域中亚稳态缺陷的产生，这与我们先前的nc-Si：H细胞稳定性研究中的解释一致。

著录项

来源
《Applied Physicsletters》 |2009年第2期|023506.1-023506.3|共3页
作者
Keda Wang; Daxing Han; Guozhen Yue; Baojie Yan; Jeffrey Yang; Subhendu Guha;
展开▼
作者单位

Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA;

Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA;

United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084, USA;

United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084, USA;

United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084, USA;

United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan 48084, USA;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Enhancement of light-induced degradation under reverse bias in hydrogenated nanocrystalline silicon solar cells [J] . Guozhen Yue, Baojie Yan, Jeffrey Yang, Journal of Applied Physics . 2005,第7期

机译：氢化纳米晶硅太阳能电池在反向偏压下光诱导降解的增强
2. Effect of electrical bias on metastability in hydrogenated nanocrystalline silicon solar cells [J] . Guozhen Yue, Baojie Yan, Jeffrey Yang, Applied Physics Letters . 2005,第9期

机译：电偏压对氢化纳米晶硅太阳能电池亚稳的影响
3. Light-induced metastability in hydrogenated nanocrystalline silicon solar cells [J] . Yan BJ, Yue GZ, Owens JM, Applied Physics Letters . 2004,第11期

机译：氢化纳米晶硅太阳能电池中的光诱导亚稳
4. On the mechanism of light-induced open-circuit voltage increase in mixed-phase hydrogenated silicon solar cells [C] . Baojie Yan, Yang, J., . 2003

机译：混合相氢化硅太阳能电池光致开路电压升高的机理研究
5. Improving the light-induced degradation of hydrogenated amorphous silicon solar cells using fabrication at elevated temperatures and low pressure [D] . Modtland, Brian Joseph 2013

机译：通过在高温和低压下制造来改善氢化非晶硅太阳能电池的光诱导降解
6. n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers [O] . Dipendra Adhikari, Maxwell M. Junda, Corey R. Grice, 2019

机译：具有射频磁控溅射吸收剂的n-i-p纳米晶氢化硅太阳能电池
7. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells [O] . C.-S. Jiang, H.R. Moutinho, R.C. Reedy, 2012

机译：氢化纳米晶硅太阳能电池中电势的显微镜测量
8. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint. [R] . Jiang, C. S., Moutinho, H. R., Reedy, R. C., 2012

机译：氢化纳米晶硅太阳能电池中电位的微观测量：预印。

Light-induced increase of nonradiative recombination centers in hydrogenated nanocrystalline silicon solar cells under reverse electric bias

摘要

著录项

相似文献

相关主题

期刊订阅