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首页> 外文期刊>Applied Physicsletters >Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation
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Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation

机译:极紫外自由电子激光辐照下无机材料损伤阈值的波长依赖性

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摘要

We exposed bulk SiC and films of SiC and B_4C to single 25 fs long free-electron-laser pulses with wavelengths between 13.5 and 32 nm. The materials are candidates for x-ray free-electron laser optics. We found that the threshold for surface-damage of the bulk SiC samples exceeds the fluence required for thermal melting at all wavelengths. The damage threshold of the film sample shows a strong wavelength dependence. For wavelengths of 13.5 and 21.7 nm, the damage threshold is equal to or exceeds the melting threshold, whereas at 32 nm the damage threshold falls below the melting threshold.
机译:我们将块状SiC以及SiC和B_4C的薄膜暴露于波长为13.5至32 nm的单个25 fs长的自由电子激光脉冲。这些材料是X射线自由电子激光光学的候选材料。我们发现,大块SiC样品的表面损伤阈值超过了在所有波长下热熔所需的能量密度。薄膜样品的损伤阈值显示出很强的波长依赖性。对于13.5和21.7 nm的波长,损伤阈值等于或超过熔化阈值,而在32 nm处,损伤阈值低于熔化阈值。

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  • 来源
    《Applied Physicsletters》 |2009年第11期|111104.1-111104.3|共3页
  • 作者单位

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    Lawrence Livermure National Laboratory, Livermore, California 94550, USA;

    SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA;

    Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw. Poland;

    Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw. Poland;

    Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw. Poland;

    Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw. Poland;

    Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw. Poland;

    Institute of Physics AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Institute of Physics AS CR, Na Slovance 2, 182 21 Prague 8, Czech Republic;

    Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg. Germany;

    Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg. Germany;

    Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, 22607 Hamburg. Germany;

    Department of Cell and Molecular Biology, Biomedical Centre, Uppsala University, P.O. Box 596, SE-75124 Uppsala, Sweden;

    Department of Cell and Molecular Biology, Biomedical Centre, Uppsala University, P.O. Box 596, SE-75124 Uppsala, Sweden;

    Department of Cell and Molecular Biology, Biomedical Centre, Uppsala University, P.O. Box 596, SE-75124 Uppsala, Sweden;

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