Highly sensitive detection of near-field Raman scattered light from strained Si/SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering

M. Yoshikawa; M. Murakami; H. Ishida

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Highly sensitive detection of near-field Raman scattered light from strained Si/SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering

机译：通过使用紫外共振拉曼散射扫描近场光学拉曼显微镜，高灵敏度地检测应变Si / SiGe异质结构中的近场拉曼散射光

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摘要

We have developed a scanning near-field Raman microscope (SNORM) with a hollow pyramidal probe that uses ultraviolet resonant Raman scattering and measured changes in the near-field and far-field Raman intensities of strained Si/SiGe heterostructures as a

机译：我们开发了一种具有空心金字塔形探头的扫描近场拉曼显微镜（SNORM），该探头使用紫外线共振拉曼散射，并测量了应变Si / SiGe异质结构的近场和远场拉曼强度变化。

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《Applied Physicsletters》 |2008年第9期|82-84|共3页
作者
M. Yoshikawa; M. Murakami; H. Ishida;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100 nm spatial resolution and 5 nm depth resolution, using ultraviolet resonant Raman scattering [J] . M. Yoshikawa, M. Murakami, H. Ishida Applied Physics Letters . 2007,第13期

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2. Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering [J] . Masanobu YOSHIKAWA, Masataka MURAKAMI, Keiko MATSUDA, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2006,第17a19期

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机译：拉曼成像与近场扫描光学显微镜

Highly sensitive detection of near-field Raman scattered light from strained Si/SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering

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