On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO_2/SiO_2 gate stack

Debabrata Maji; Felice Crupi; Gino Giusi; Calogero Pace; Eddy Simoen; Cor Claeys; V. Ramgopal Rao

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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO_2/SiO_2 gate stack

机译：具有TiN / TaN / HfO_2 / SiO_2栅堆叠的外延Ge p沟道金属氧化物半导体场效应晶体管中栅极电流的直流和噪声特性

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In this paper, we report the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide field effect transistors (pMOSFETs) with a Si passivated surface. The gate stack consists of HfO_2/SiO_2 dielectric with TiN/TaN metal gate. The

机译：在本文中，我们报告了具有Si钝化表面的外延Ge p沟道金属氧化物场效应晶体管（pMOSFET）的栅极电流的直流和噪声特性。栅堆叠由HfO_2 / SiO_2电介质和TiN / TaN金属栅组成。的

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来源
《Applied Physicsletters》 |2008年第16期|240-242|共3页
作者
Debabrata Maji; Felice Crupi; Gino Giusi; Calogero Pace; Eddy Simoen; Cor Claeys; V. Ramgopal Rao;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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专利

1. Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO_2/SiO_2 Gate-Stack Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Takeo Matsuki, Ranga Hettiarachchi, Wei Feng, Japanese journal of applied physics . 2011,第10Issue2期

机译：氮掺入对多晶硅/ TiN / HfO_2 / SiO_2栅叠层金属氧化物半导体场效应晶体管的低频噪声的影响
2. Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO_2/GeO_2 gate stack [J] . Keisuke Yamamoto, Takahiro Sada, Dong Wang, Applied Physics Letters . 2013,第12期

机译：通过将Al和Hf引入SiO_2 / GeO_2栅叠层中来显着增强金属源极/漏极Ge p沟道金属氧化物半导体场效应晶体管中的低电场空穴迁移率
3. Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO_2/metal gate stacks [J] . Szu-Han Ho, Ting-Chang Chang, Bin-Wei Wang, Applied Physics Letters . 2013,第1期

机译：用电荷泵技术在带有HfO_2 /金属栅叠层的p沟道金属氧化物半导体场效应晶体管的高压区中测量的额外陷阱的研究
4. Inversion-Type Surface Channel In_(0.53)Ga_(0.47)As Metal-Oxide-Semiconductor Field-Effect Transistors with Metal-Gate/High-k Dielectric Stack and CMOS-Compatible PdGe Contacts [C] . Hock-Chun Chin, Xinke Liu, Leng-Seow Tan, International Symposium on VLSI Technology, Systems and Applications . 2009

机译：反转式表面通道IN_（0.53）GA_（0.47）作为金属氧化物 - 半导体场效应晶体管，具有金属栅极/高k电介质堆叠和CMOS兼容的PDGE接触
5. Gate dielectric investigations of ultra-thin oxide and nitride /oxide stack for nanometer N- and P -channel metal-oxide-semiconductor field-effect-transistors [D] . Yee, Kam Fu 2000

机译：纳米N沟道和P沟道金属氧化物半导体场效应晶体管的超薄氧化物和氮化物/氧化物堆叠的栅极电介质研究
6. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor [O] . Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, -1

机译：基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
7. Complementary Metal Oxide Semiconductor Image Sensor Using a Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector for High-Speed Binary Operation [O] . 2018

机译：互补金属氧化物半导体图像传感器使用栅极/体绑住的P沟道金属氧化物半导体效果晶体管型光电探测器，用于高速二进制操作
8. Fabrication of n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with0.2 Micrometer Gate Lengths in 500 A Thin Film Silicon on Sapphire. (Reannouncement with New Availability Information) [R] . de la Houssaye, P. R., Offord, B. W., Minter, J. P., 1992

机译：在蓝宝石上的500 a薄膜硅中制造具有0.2微米栅极长度的n沟道金属氧化物半导体场效应晶体管。（重新公布新的可用性信息）

On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO_2/SiO_2 gate stack

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