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首页> 外文期刊>Applied Physicsletters >Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation
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Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation

机译:利用低功率2.45 GHz微波辐射的磁场低温生长铁酸锆钛酸铅钛薄膜

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摘要

Pb(Zr_xTi_(1-x)O_3 (PZT) thin films were coated on Pt/Ti/SiO_2/Si substrates by the sol-gel method and then crystallized by using the magnetic field of 2.45 GHz microwave irradiation. The elevated temperature generated by microwave irradiation used to obtain the perovskite phase was only 450 ℃, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave irradiation showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600 ℃. It is clear that single-mode 2.45 GHz microwave irradiation in the microwave magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.
机译:通过溶胶-凝胶法将Pb(Zr_xTi_(1-x)O_3(PZT)薄膜涂覆在Pt / Ti / SiO_2 / Si衬底上,然后在2.45 GHz微波辐射的磁场下结晶。用于获得钙钛矿相的微波辐射仅为450℃,明显低于常规热处理,通过微波辐照结晶的PZT薄膜的铁电性能与常规在600℃热处理的薄膜相似。显然,微波磁场中的单模2.45 GHz微波辐射对于在低温下获得钙钛矿PZT薄膜是有效的。

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