Effects Of Background Oxygen Pressure On Dielectric And Ferroelectric Properties Of Epitaxial (k_(0.44),na_(0.52),li_(0.04))(nb_(0.84),ta_(0.10),sb_(0.06))o_3 Thin Films On Srtio_3

M. Abazari; E. K. Akdogan; A. Safari

首页> 外文期刊>Applied Physicsletters >Effects Of Background Oxygen Pressure On Dielectric And Ferroelectric Properties Of Epitaxial (k_(0.44),na_(0.52),li_(0.04))(nb_(0.84),ta_(0.10),sb_(0.06))o_3 Thin Films On Srtio_3

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Effects Of Background Oxygen Pressure On Dielectric And Ferroelectric Properties Of Epitaxial (k_(0.44),na_(0.52),li_(0.04))(nb_(0.84),ta_(0.10),sb_(0.06))o_3 Thin Films On Srtio_3

机译：背景氧压对外延（k_（0.44），na_（0.52），li_（0.04））（nb_（0.84），ta_（0.10），sb_（0.06））o_3外延薄膜介电和铁电性能的影响

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Oxygen partial pressure (P_(O_2)) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450 nm <001> oriented epitaxial (K_(0.44),Na_(0.52),Li_(0.04))(Nb_(0.84),Ta_(0.10),Sb_(0.06))O_3 thin films on SrRuO_3 coated SrTiO_3. Films deposited at 400 mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5 μC/cm~2, respectively, which is ～100% increase over the ones grown at 100 mTorr. The dielectric constant linearly increases from 220 to 450 with increasing P_(O_2). The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

机译：脉冲激光沉积中的氧分压（P_（O_2））显着影响外延失配应变消除的450 nm <001>取向外延（K_（0.44），Na_（0.52），Li_（0.04）的成分，微观结构和电性能））（Nb_（0.84），Ta_（0.10），Sb_（0.06））O_3薄膜在SrRuO_3涂覆的SrTiO_3上。在400 mTorr下沉积的薄膜分别具有7.5和16.5μC/ cm〜2的高残留极化和饱和极化，比在100 mTorr下生长的薄膜高约100％。随着P_（O_2）的增加，介电常数从220线性增加到450。观察到的薄膜表面形态及其性能的变化是由于抑制了挥发性A位阳离子损失。

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《Applied Physicsletters》 |2008年第19期|231-233|共3页
作者
M. Abazari; E. K. Akdogan; A. Safari;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Effect of manganese doping on remnant polarization and leakage current in (K_(0.44), Na_(0.52), Li_(0.04))(Nb_(0.84), Ta_(0.10), Sb_(0.06))O_3 epitaxial thin films on SrTiO_3 [J] . M. Abazari, E. K. Akdogan, A. Safari Applied Physicsletters . 2008,第21期

机译：锰掺杂对SrTiO_3上（K_（0.44），Na_（0.52），Li_（0.04））（Nb_（0.84），Ta_（0.10），Sb_（0.06））O_3外延薄膜中残余极化和漏电流的影响
2. Giant piezoelectric behavior in relaxor ferroelectric environment friendly Na_(0.52)K_(0.44)Li_(0.04)Nb_(0.84)Ta_(0.10)Sb_(0.06)O_3 ceramics for high temperature applications [J] . Abid Hussain, Nidhi Sinha, Komal Dhankhar, Journal of materials science . 2018,第8期

机译：弛豫铁电环境友好的Na_（0.52）K_（0.44）Li_（0.04）Nb_（0.84）Ta_（0.10）Sb_（0.06）O_3陶瓷在高温应用中的巨大压电性能
3. Ferroelectric (K_(0.44)Na_(0.52)Li_(0.04))(Nb_(0.86)Ta_(0.10)Sb_(0.04))O_3 Thin Films Prepared by Pulsed Laser Deposition [J] . AIFEN TIAN, WEI REN, PENG SHI, Ferroelectrics . 2010,第Null期

机译：脉冲激光沉积制备的铁电（K_（0.44）Na_（0.52）Li_（0.04））（Nb_（0.86）Ta_（0.10）Sb_（0.04））O_3薄膜
4. (1-x)(K_(0.44)Na_(0.52)Li_(0.04))(Nb_(0.84)Ta_(0.10)Sb_(0.06))O_3-xSrTiO_3 Lead Free Piezoelectric Ceramics [C] . Minghe Cao, Wanqiang Wang, Zhiyong Yu, China International Conference on High-Performance Ceramics . 2008

机译：（1-x）（K_（0.44）NA_（0.52）LI_（0.04））（NB_（0.84）TA_（0.10）SB_（0.06））O_3-XSRTIO_3无铅压电陶瓷
5. Effects of nonequally biaxial misfit strains on the phase diagram and dielectric properties of epitaxial ferroelectric thin films [O] . Wang, J, Zhang, TY 2005

机译：非等双轴失配应变对外延铁电薄膜相图和介电性能的影响

Effects Of Background Oxygen Pressure On Dielectric And Ferroelectric Properties Of Epitaxial (k_(0.44),na_(0.52),li_(0.04))(nb_(0.84),ta_(0.10),sb_(0.06))o_3 Thin Films On Srtio_3

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