Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al_2O_3

B. Hoex; J. Schmidt; R. Bock; P. P. Altermatt; M. C. M. van de Sanden; W. M. M. Kessels

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Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al_2O_3

机译：负电介质Al_2O_3对高掺杂p型Si表面的出色钝化

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From lifetime measurements, including a direct experimental comparison with thermal SiO_2, a-Si:H, and as-deposited a-SiN_x:H, it is demonstrated that A1_2O_3 provides an excellent level of surface passivation on highly B-doped c-Si with doping concentrations around 10~(19) cm~(-3). The A1_2O_3 films, synthesized by plasma-assisted atomic layer deposition and with a high fixed negative charge density, limit the emitter saturation current density of B-diffused p~+-emitters to～10 and ～30 fA/cm~2 on＞100 and 54 Ω/sq sheet resistance p~+-emitters, respectively. These results demonstrate that highly doped p-type Si surfaces can be passivated as effectively as highly doped n-type surfaces.

机译：从寿命测量，包括与热SiO_2，a-Si：H和沉积的a-SiN_x：H的直接实验比较，证明了Al_2O_3在高B掺杂的c-Si上提供了极好的表面钝化水平掺杂浓度约为10〜（19）cm〜（-3）。通过等离子体辅助原子层沉积合成的具有高固定负电荷密度的A1_2O_3薄膜，在＞ 100的情况下，将B扩散的p〜+发射极的发射极饱和电流密度限制为〜10和〜30 fA / cm〜2。和54Ω/ sq薄层电阻p〜+-发射极。这些结果表明，高掺杂的p型Si表面可以与高掺杂的n型表面一样有效地被钝化。

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来源
《Applied Physics Letters》 |2007年第11期|p.112107.1-112107.3|共3页
作者
B. Hoex; J. Schmidt; R. Bock; P. P. Altermatt; M. C. M. van de Sanden; W. M. M. Kessels;
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Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven,The Netherlands;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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7. Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 [O] . Hoex, B Bram, Schmidt, J Jeroen, Bock, R, 2007

机译：负电荷电介质Al2O3对高掺杂p型Si表面的出色钝化

Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al_2O_3

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