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首页> 外文期刊>Applied Physics Letters >Dielectric properties of Ba_(0.6)Sr_(0.4)TiO_3 thin films using Pb_(0.3)Sr_(0.7)TiO_3 buffer layers
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Dielectric properties of Ba_(0.6)Sr_(0.4)TiO_3 thin films using Pb_(0.3)Sr_(0.7)TiO_3 buffer layers

机译：使用Pb_（0.3）Sr_（0.7）TiO_3缓冲层的Ba_（0.6）Sr_（0.4）TiO_3薄膜的介电性能

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摘要

Ba_(0.6)Sr_(0.4)TiO_3 (BST) thin films buffered with Pb_(0.3)Sr_(0.7)TiO_3 (PST) at each side of the interface contact with electrodes (PST/BST/PST) were deposited on Pt/Ti/SiO_2/Si substrates. The dielectric properties of the films were measured using planar Pt/PST/BST/PST/Pt/Ti/SiO_2/Si capacitor structures. The existence of a PST layer between the BST and Pt electrode can improve the dielectric properties of the BST film. The loss tangent of the multilayered films annealed at 750 ℃ was found to be 0.016 at 1 MHz and room temperature. The films showed a ～31.7% tunability of the permittivity at an applied bias field of 0.85 MV/cm. This suggests that such films have potential applications for integrated device applications.
机译：在与电极（PST / BST / PST）接触的界面的每一侧用Pb_（0.3）Sr_（0.7）TiO_3（PST）缓冲的Ba_（0.6）Sr_（0.4）TiO_3（BST）薄膜沉积在Pt / Ti / SiO_2 / Si基板。使用平面Pt / PST / BST / PST / Pt / Ti / SiO_2 / Si电容器结构测量薄膜的介电性能。在BST和Pt电极之间存在PST层可以改善BST膜的介电性能。在1 MHz和室温下，在750℃退火的多层膜的损耗角正切为0.016。在施加的偏置电场为0.85 MV / cm时，薄膜的介电常数可调谐性约为〜31.7％。这表明这种膜对于集成设备应用具有潜在的应用。

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