Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires

Hemanth Jagannathan; Yoshio Nishi; Mark Reuter; Matthew Copel; Emanuel Tutuc; Supratik Guha; Rafael P. Pezzi

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Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires

机译：氧化物覆盖层形成对金催化外延硅纳米线生长的影响

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A direct dependence between the inadvertent formation of SiO_2 on gold films deposited on silicon < 111 > substrates, and the nucleation and yield of epitaxial, gold catalyzed, silicon nanowires grown on such substrates is reported. The unintended SiO_2 layer formed due to the diffusion of silicon from the underlying substrate through the gold film is observed to be 0.5 nm with medium energy ion scattering after brief exposures of 10-15 min in air. Silicon nanowires grown at 500℃ on such samples show reduced nucleation and growth. A remarkable improvement in nanowire nucleation density and epitaxy is observed on removing the SiO_2 overlayer prior nanowire growth.

机译：据报道，在沉积在硅<111>衬底上的金膜上无意中形成SiO_2与生长在这种衬底上的外延，金催化的硅纳米线的成核和产率之间存在直接的关系。观察到由于硅从下层基板通过金膜的扩散而形成的意想不到的SiO_2层在空气中短暂暴露10-15分钟后具有中等能量离子散射，为0.5 nm。在这种样品上于500℃生长的硅纳米线显示出减少的成核和生长。在纳米线生长之前除去SiO 2覆盖层时，观察到纳米线成核密度和外延的显着改善。

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来源
《Applied Physics Letters》 |2006年第10期|p.103113.1-103113.3|共3页
作者
Hemanth Jagannathan; Yoshio Nishi; Mark Reuter; Matthew Copel; Emanuel Tutuc; Supratik Guha; Rafael P. Pezzi;
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作者单位

Department of Electrical Engineering, Stanford University, Stanford, California 94305;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires

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