Photoreflectance investigation of InAs quantum dashes embedded in In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well grown on InP substrate

W. Rudno-Rudzinski; R. Kudrawiec; G. Sek; J. Misiewicz; A. Somers; R. Schwertberger; J. P. Reithmaier; A. Forchel

首页> 外文期刊>Applied Physics Letters >Photoreflectance investigation of InAs quantum dashes embedded in In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well grown on InP substrate

【24h】

Photoreflectance investigation of InAs quantum dashes embedded in In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well grown on InP substrate

机译：在InP衬底上生长的In_（0.53）Ga_（0.47）As / In_（0.53）Ga_（0.23）Al_（0.24）As量子中嵌入的InAs量子虚线的光反射研究

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Photoreflectance (PR) measurements were performed on molecular-beam-epitaxy-grown self-assembled InAs quantum dashes (QDashes) embedded in an In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well grown on InP substrate. PR resonances related to optical transitions in all relevant parts of the structure, i.e., InAs/In_(0.53)Ga_(0.47)As QDashes, In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well, and in In_(0.53)Ga_(0.23)Al_(0.24)As barriers were observed. By matching the theoretical calculations performed within the effective mass approximation with experimental data, the energy level structure of the whole system was determined. On the basis of the obtained energy level diagram, it was concluded that both electrons and heavy holes are localized within the InAs/In_(0.53)Ga_(0.47)As QDashes, the structure is of Type Ⅰ.

机译：对嵌入在In_（0.53）Ga_（0.47）As / In_（0.53）Ga_（0.23）Al_（0.24）As中的分子束外延生长的自组装InAs量子破折号（QDashes）进行光反射（PR）测量在InP衬底上生长良好的量子。与结构的所有相关部分中的光学跃迁相关的PR共振，即InAs / In_（0.53）Ga_（0.47）As QDash，In_（0.53）Ga_（0.47）As / In_（0.53）Ga_（0.23）Al_（0.24）作为量子阱，在In_（0.53）Ga_（0.23）Al_（0.24）As中观察到势垒。通过将在有效质量近似值内进行的理论计算与实验数据进行匹配，可以确定整个系统的能级结构。根据所获得的能级图，可以得出结论，电子和重空穴都位于InAs / In_（0.53）Ga_（0.47）As QDash中，结构为Ⅰ型。

著录项

来源
《Applied Physics Letters》 |2006年第14期|p.141915.1-141915.3|共3页
作者
W. Rudno-Rudzinski; R. Kudrawiec; G. Sek; J. Misiewicz; A. Somers; R. Schwertberger; J. P. Reithmaier; A. Forchel;
展开▼
作者单位

Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
关键词

相似文献

外文文献
中文文献

1. On the tunnel injection of excitons and free carriers from In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well to InAs/In_(0.53)Ga_(0.23)Al_(0.24)As quantum dashes [J] . P. Podemski, R. Kudrawiec, J. Misiewicz, Applied Physics Letters . 2006,第6期

机译：从In_（0.53）Ga_（0.47）As / In_（0.53）Ga_（0.23）Al_（0.24）As量子阱到InAs / In_（0.53）Ga_（0.23）Al_（0.24）的激子和自由载流子的隧道注入量子破折号
2. Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well and InAs quantum dashes [J] . R. Kudrawiec, G. Sek, M. Motyka, Journal of Applied Physics . 2010,第8期

机译：In_（0.53）Ga_（0.47）As / In_（0.53）Ga_（0.23）Al_（0.24）As量子阱和InAs量子破折线组成的隧道注入结构中光学跃迁的非接触电反射
3. Contactless electroreflectance of InAs/In_(0.53)Ga_(0.23)Al_(0.24)As quantum dashes grown on InP substrate: Analysis of the wetting layer transition [J] . R. Kudrawiec, M. Motyka, J. Misiewicz, Journal of Applied Physics . 2007,第1期

机译：InP衬底上生长的InAs / In_（0.53）Ga_（0.23）Al_（0.24）As量子虚线的非接触电反射：润湿层转变的分析
4. Effect of Doping at the substrate/buffer layer interface on the rashba coefficient α in In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As asymmetric quantum wells [C] . Takaaki Koga, Junsaku Nitta, Stephane Marcet International Symposium on Mesoscopic Superconductivity and Spintronics . 2003

机译：掺杂在基板/缓冲层界面在RashBA系数α中的in_（0.52）Al_（0.48）AS / IN_（0.53）GA_（0.47）AS / IN_（0.52）AL_（0.48）中的效果，为非对称量子阱
5. Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate [O] . Md. Mamunur Rahman, Jun-Gyu Kim, Dae-Hyun Kim, -1

机译：电容等效厚度的边界阱提取以反映对300mm Si衬底上原子层沉积High-k / In0.53Ga0.47As的量子力学效应
6. Electric‐field dependence of interband transitions in In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single quantum wells by room‐temperature electrotransmittance [O] . Dimoulas A., Giapis K. P., Leng J., 1992

机译：In_（0.53）Ga_（0.47）As / In_（0.52）Al_（0.48）As单量子阱中带间跃迁的电场依赖性及其室温电透射率
7. Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy [R] . Ohmori, K. , Hino, H. , Fujita, T. , 2006

机译：通过分子束外延在（775）B Inp衬底上生长的大量改进的自组织In（0.53）Ga（0.47）as量子线激光器

Photoreflectance investigation of InAs quantum dashes embedded in In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well grown on InP substrate

摘要

著录项

相似文献

相关主题

期刊订阅