...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Physics Letters >Large open-circuit voltage improvement by rapid thermal annealing of evaporated solid-phase-crystallized thin-film silicon solar cells on glass
【24h】

Large open-circuit voltage improvement by rapid thermal annealing of evaporated solid-phase-crystallized thin-film silicon solar cells on glass

机译：通过玻璃上蒸发的固相晶化薄膜硅太阳能电池的快速热退火，可大幅提高开路电压

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this letter, we investigate the impact of rapid thermal annealing (RTA) on thin-film polycrystalline silicon (pc-Si) solar cells on glass made by evaporation of amorphous silicon (a-Si) and subsequent solid-phase crystallization (SPC). These devices have the potential to deliver low-cost photovoltaic electricity and are named EVA cells (SPC of EVAporated a-Si). The RTA is used to perform a high-temperature ( >700 ℃) process for point defect annealing and dopant activation. RTA processes have predominantly been developed for wafer-based devices yet also have great potential for low-temperature devices such as thin-film pc-Si on glass solar cells. Parameter variations are performed on EVA solar cells to determine optimum values for point defect removal and dopant activation while minimizing dopant diffusion causing junction smearing. The 1-Sun open-circuit voltage, V_(oc), of the as-crystallized pc-Si devices is rather modest (135 mV). However, after RTA and subsequent hydrogen passivation in a rf PECVD plasma, a V_(oc) of 454 mV is realized, representing a large improvement by a factor of 3.4. With an optimized passivation and dopant profile, a V_(oc) greater than 500 mV is well within the reach of the EVA technology.
机译：在这封信中，我们研究了快速热退火（RTA）对通过蒸发非晶硅（a-Si）和随后的固相结晶（SPC）制成的玻璃上的薄膜多晶硅（pc-Si）太阳能电池的影响。这些设备具有提供低成本光伏电力的潜力，被称为EVA电池（EVAporated a-Si的SPC）。 RTA用于执行高温（> 700℃）工艺以进行点缺陷退火和掺杂剂激活。 RTA工艺主要针对基于晶片的器件而开发，但对于诸如玻璃太阳能电池上的薄膜pc-Si之类的低温器件也具有很大的潜力。在EVA太阳能电池上执行参数更改，以确定用于点缺陷去除和掺杂剂激活的最佳值，同时最大程度地减少引起结污染的掺杂剂扩散。晶态化的pc-Si器件的1-Sun开路电压V_（oc）相当适中（135 mV）。但是，在rf PECVD等离子体中进行RTA和随后的氢钝化之后，实现了454 mV的V_（oc），代表着3.4的大改进。通过优化的钝化和掺杂剂分布，大于500 mV的V_（oc）完全在EVA技术的范围之内。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号