Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study

T. Hornos; A. Gali; R. P. Devaty; W. J. Choyke

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Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study

机译：化学气相沉积碳化硅层中磷的掺杂：理论研究

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Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical-vapor-deposited (CVD) silicon carbide (SiC) layers. We simulated the CVD conditions by using the appropriate chemical potentials for hydrogen and phosphorus (P). We find that the site selection of P is not affected by the presence of hydrogen, and hydrogen does not practically passivate the P donors. We find that the most abundant defect is P at the Si-site followed by P at the C-site. The calculated concentrations of the P donors and free carriers in CVD grown SiC agree with the experimental findings.

机译：已经进行了从头算起的超级电池计算，以研究化学气相沉积（CVD）的碳化硅（SiC）层中磷的掺杂。我们通过使用氢和磷（P）的适当化学势来模拟CVD条件。我们发现P的位点选择不受氢的存在的影响，并且氢实际上不会钝化P供体。我们发现，最丰富的缺陷是Si部位的P，其次是C部位的P。 CVD生长的SiC中P供体和自由载流子的计算浓度与实验结果一致。

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《Applied Physics Letters》 |2005年第21期|p.212114.1-212114.3|共3页
作者
T. Hornos; A. Gali; R. P. Devaty; W. J. Choyke;
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作者单位

Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8., H-1111, Budapest, Hungary;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study

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