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首页> 外文期刊>Applied Physics Letters >Improved performance of InP-based 2.1 μm InGaAsSb quantum well lasers using Sb as a surfactant
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Improved performance of InP-based 2.1 μm InGaAsSb quantum well lasers using Sb as a surfactant

机译：使用Sb作为表面活性剂的基于InP的2.1μmInGaAsSb量子阱激光器的性能提高

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摘要

We demonstrate significantly enhanced performance of 2.1 mu m InGaAsSb quantum well lasers using Sb as a surfactant. The lasers are grown on an InP substrate by metal-organic vapor-phase epitaxy. Following the introduction of Sb, a double-channel waveguide laser, with uncoated facets, shows a remarkably increased continuous-wave output power of 330 mW, compared with 160 mW for a Sb-free InGaAs quantum well laser, measured at 10 degrees C. Moreover, the introduction of Sb improves the temperature performance of the device and doubles its wall-plug efficiency. In addition, the active region material and interface quality are investigated by transmission electron microscopy, which help to elucidate the basic physical mechanism of the Sb surfactant effect. Published by AIP Publishing.
机译：我们证明了使用Sb作为表面活性剂的2.1微米InGaAsSb量子阱激光器的性能大大提高。激光通过金属有机气相外延生长在InP衬底上。引入Sb之后，具有未镀膜小平面的双通道波导激光器显示出330 mW的连续波输出功率显着增加，而在10摄氏度下测量的无Sb InGaAs量子阱激光器的连续波输出功率为160 mW。此外，Sb的引入改善了器件的温度性能，并使壁塞效率提高了一倍。此外，通过透射电子显微镜研究了活性区域的材料和界面质量，这有助于阐明Sb表面活性剂效应的基本物理机理。由AIP Publishing发布。

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  • 来源
    《Applied Physics Letters》 |2018年第25期|251101.1-251101.5|共5页
  • 作者

    Wang Dongbo; Zhuo Ning; Zhao Yue; Cheng Fengmin; Niu Shouzhu; Zhang Jinchuan; Zhai Shenqiang; Wang Lijun; Liu Shuman; Liu Fengqi; Wang Zhanguo;

  • 作者单位

    Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Lasers, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;

    Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;

    Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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