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首页> 外文期刊>Applied Physics Letters >Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps
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Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps

机译：在具有宏台阶的AlN模板上生长的AlGaN量子阱中的载流子定位结构与当前微径结合

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摘要

The microscopic structural and optical characteristics of AlGaN-based light-emitting diodes grown on AIN templates with macrosteps were evaluated. Cross-sectional transmission electron microscopy in the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy reveal that the AlGaN cladding layer under the AlGaN quantum wells (QWs) has microscopic compositional modulations originating from the macrosteps at the AIN template surface. The Ga-rich oblique zones in the cladding layer likely behave as current micropaths. These micropaths are connected to the carrier localization structure, which is formed by the modulation of both the well widths and the compositions of the QWs. In-plane spatially resolved cathodoluminescence (CL) spectroscopy indicated significant inhomogeneity of the CL characteristics: the brighter emission with a lower peak photon energy confirms the existence of the carrier localization structure in the QWs. Carrier localization in the QWs along with the current micropaths in the AlGaN cladding layer appears to increase the external quantum efficiency of AlGaN LEDs. Published under license by AIP Publishing.
机译：评价了在AIN模板上具有宏观台阶的AlGaN基发光二极管的微观结构和光学特性。高角度环形暗场扫描模式下的截面透射电子显微镜和微观能量色散X射线光谱显示，AlGaN量子阱（QWs）下的AlGaN包层具有微观成分调制，该调制成分源自AIN模板的宏观台阶表面。覆层中富Ga的倾斜区可能表现为当前的微径。这些微径连接到载流子定位结构，该载流子定位结构是通过调制阱宽度和QW的组成而形成的。面内空间分辨阴极发光（CL）光谱表明CL特性存在明显的不均匀性：发射光较低且峰值光子能量较低，这表明QW中存在载流子定位结构。 QW中的载流子定位以及AlGaN覆层中的电流微径似乎增加了AlGaN LED的外部量子效率。由AIP Publishing授权发布。

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  • 来源
    《Applied Physics Letters》 |2019年第1期|011102.1-011102.5|共5页
  • 作者

    Kojima K.; Nagasawa Y.; Hirano A.; Ippommatsu M.; Honda Y.; Amano H.; Akasaki I.; Chichibu S. F.;

  • 作者单位

    Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan;

    UV Craftory Co Ltd, Chikusa Ku, Nagoya, Aichi 4640015, Japan;

    UV Craftory Co Ltd, Chikusa Ku, Nagoya, Aichi 4640015, Japan;

    UV Craftory Co Ltd, Chikusa Ku, Nagoya, Aichi 4640015, Japan;

    Nagoya Univ, Inst Mat & Syst Sustainabil, Chikusa Ku, Nagoya, Aichi 4648601, Japan;

    Nagoya Univ, Inst Mat & Syst Sustainabil, Chikusa Ku, Nagoya, Aichi 4648601, Japan|Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648601, Japan|Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648601, Japan;

    Nagoya Univ, Akasaki Res Ctr, Chikusa Ku, Nagoya, Aichi 4648601, Japan|Meijo Univ, Tempaku Ku, Nagoya, Aichi 4688502, Japan;

    Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan|Nagoya Univ, Inst Mat & Syst Sustainabil, Chikusa Ku, Nagoya, Aichi 4648601, Japan|Hokkaido Univ, Res Ctr Integrated Quantum Elect, Kita Ku, Sapporo, Hokkaido 0600813, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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