机译:基于AIN衬底上生长的富含Al的AlGaN的高增益,大面积和太阳盲雪崩光电二极管
Adroit Materials Inc. 2054 Kildaire Farm Rd. Cary North Carolina 27518 USA;
Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695-7919 USA;
Department of Electrical and Computer Engineering North Carolina State University Raleigh North Carolina 27695-7919 USA;
Adroit Materials Inc. 2054 Kildaire Farm Rd. Cary North Carolina 27518 USA Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695-7919 USA;
机译:使用异质结构作为单独的吸收和倍增区域的高增益N面AlGaN太阳盲雪崩光电二极管
机译:高效率,高增益的所有AlGaN外延结构太阳盲雪崩光电二极管
机译:高增益AlGaN日盲雪崩光电二极管
机译:AlGaN基日盲UV雪崩光电二极管的噪声特性
机译:太阳盲紫外光电探测器,焦平面阵列和可见盲雪崩光电二极管。
机译:图案硅衬底上生长的高外部量子效率基于AlGaN的深紫外发光二极管的生长与制备
机译:AlGaN日盲雪崩光电二极管的增益和时间响应:整体蒙特卡洛分析