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首页> 外文期刊>Applied Physics Letters >Vertical carrier transport in strain-balanced InAs/InAsSb type-Ⅱ superlattice material
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Vertical carrier transport in strain-balanced InAs/InAsSb type-Ⅱ superlattice material

机译：垂直载体输送在应变平衡inas / INASSB型超晶格材料

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摘要

Anisotropic carrier transport properties of unintentionally doped InAs/InAs_(0.65)Sb_(0.35) type-Ⅱ strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. High-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×10~3 cm~2/V s and 1.60 cm~2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.
机译：使用在垂直方向上的垂直方向上的垂直方向上的垂直方向上的温度和现场相关的磁传输测量在基板上除去金属半导体 - 金属装置结构。为了最佳地将测量的输送到超晶格，器件制造需要倒装芯片键合和背面器件处理，以将基板材料直接沉积到蚀刻台面的底部。高分辨率迁移谱分析用于计算存在的两种载体物种的电导贡献和校正的混合垂直迁移率。在相同的超晶格材料上与平面内磁传输测量的横向迁移率结合后者的结合，允许计算真正的垂直大多数电子和少数孔迁移率; 4.7×10〜3cm〜2 / V s和1.60cm〜2 / V s的振幅分别以77k确定。温度相关的结果表明，由于捕获诱导的定位，垂直空穴迁移率随温度的降低而迅速降低，而跳跃运输，垂直电子迁移率显得散射限制在高温下，在低温下接口粗糙度散射散射。到横向电子迁移率，但总体幅度较低。

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  • 来源
    《Applied Physics Letters》 |2020年第18期|182109.1-182109.5|共5页
  • 作者

    Lilian K. Casias; Christian P. Morath; Elizabeth H. Steenbergen; Gilberto A. Umana-Membreno; Preston T. Webster; Julie V. Logan; Jin K. Kim; Ganesh Balakrishnan; Lorenzo Faraone; Sanjay Krishna;

  • 作者单位

    Sandia National Laboratories Albuquerque New Mexico 87185 USA;

    Space Vehicles Directorate Air Force Research Laboratory Kirtland AFB New Mexico 87117 USA;

    Space Vehicles Directorate Air Force Research Laboratory Kirtland AFB New Mexico 87117 USA;

    Department of Electrical Electronic and Computer Engineering The University of Western Australia Crawley Washington 6009 Australia;

    Space Vehicles Directorate Air Force Research Laboratory Kirtland AFB New Mexico 87117 USA;

    Space Vehicles Directorate Air Force Research Laboratory Kirtland AFB New Mexico 87117 USA Department of Nuclear Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA;

    Sandia National Laboratories Albuquerque New Mexico 87185 USA;

    Center for High Technology Materials University of New Mexico Albuquerque New Mexico 87106 USA;

    Department of Electrical Electronic and Computer Engineering The University of Western Australia Crawley Washington 6009 Australia;

    Department of Electrical and Computer Engineering The Ohio State University Columbus Ohio 43120 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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