The proximity of the strain induced effect to improve the electron mobilityrnin a silicon-carbon source-drain structure of n-channel metal-oxidesemiconductorrnfield-effect transistors

E. R. Hsieh and Steve S. Chungau0001

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The proximity of the strain induced effect to improve the electron mobilityrnin a silicon-carbon source-drain structure of n-channel metal-oxidesemiconductorrnfield-effect transistors

机译：在n沟道金属氧化物半导体场效应晶体管的硅碳源漏结构中，应变诱发效应的接近性提高了电子迁移率

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The source/drain in an n-channel metal-oxide-semiconductor field-effect transistor u0001nMOSFETu0002rnwith solid phase epitaxial u0001SPEu0002 implanted Si:C before the spacer formation is proposed. Comparedrnto the conventional nMOSFET with SPE implanted Si:C after the spacer formation, it brings inrnproximity to the device channel and shows great improvement of electron mobility via the strongerrntensile strain effect. Experimental measurements showed that the electron mobility in the proposedrnprocess is increased by 105% over that of the control devices. At a gate length of 40 nm, an increasernof more than 67% for the drain current, comparing to those of the conventional Si:C source/drainrnnMOSFET, has been achieved

机译：提出了在隔离层形成之前，采用固相外延注入Si：C的n沟道金属氧化物半导体场效应晶体管u0001nMOSFETu0002rn中的源极/漏极。与在隔离物形成之后，传统的带有SPE注入Si：C的nMOSFET相比，它给器件沟道带来了近邻性，并通过更强的拉伸应变效应显示出电子迁移率的极大提高。实验测量表明，所提出的工艺中的电子迁移率比控制装置提高了105％。与传统的Si：C源极/漏极MOSFET相比，在40 nm的栅极长度下，漏极电流增加了67％以上

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《Applied Physics Letters》 |2010年第9期|p.1-3|共3页
作者
E. R. Hsieh and Steve S. Chungau0001;
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Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University,Hsinchu 300, Taiwan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors [J] . E. R. Hsieh, Steve S. Chung Applied Physicsletters . 2010,第9期

机译：在n沟道金属氧化物半导体场效应晶体管的硅碳源漏结构中，应变诱发效应的接近性提高了电子迁移率
2. The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors [J] . E. R. Hsieh, Steve S. Chung Applied Physics Letters . 2014,第20期

机译：对硅-碳源-漏极应变n沟道金属氧化物半导体场效应晶体管中漏极电流波动的理解
3. N-channel transparent organic thin-film transistors with Ag/LiF bilayer transparent source-drain electrodes fabricated by thermal evaporation [J] . Nan Zhang, Jie Lin, Jinsong Luo, _Applied Physics Express . 2014,第2期

机译：通过热蒸发制备具有Ag / LiF双层透明源漏电极的N沟道透明有机薄膜晶体管
4. A Strained N-channel Impact-ionization MOS (I-MOS) Transistor with Elevated Silicon-Carbon Source/Drain for Performance Enhancement [C] . Toh, Eng-Huat, Wang, . 2007

机译：具有增强的硅碳源极/漏极的应变N沟道冲击电离MOS（I-MOS）晶体管，可提高性能
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Fluorination of Metal Phthalocyanines: Single-Crystal Growth Efficient N-Channel Organic Field-Effect Transistors and Structure-Property Relationships [O] . Hui Jiang, Jun Ye, Peng Hu, -1

机译：金属酞菁的氟化：单晶生长高效的N沟道有机场效应晶体管以及结构-性能关系
7. Orientation-Dependent Electronic Structures and Charge Transport Mechanisms in Ultrathin Polymeric n-Channel Field-Effect Transistors [O] . Fabiano Simone, Yoshida Hiroyuki, Chen Zhihua, 2013

机译：超薄聚合物n沟道场效应晶体管中与方向相关的电子结构和电荷传输机制

The proximity of the strain induced effect to improve the electron mobilityrnin a silicon-carbon source-drain structure of n-channel metal-oxidesemiconductorrnfield-effect transistors

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