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Anomalous Hall and Nernst effects in ferrimagnetic Mn_4N films: Possible interpretations and prospects for enhancement

机译:在Ferrimagnetic MN_4N电影中的异常大厅和内部效果:可能的解释和增强前景

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摘要

Ferrimagnetic Mn_4N is a promising material for heat flux sensors, based on the anomalous Nernst effect (ANE), because of its sizeable uniaxial magnetic anisotropy (K_u) and low saturation magnetization (M_s). We experimentally and theoretically investigated the ANE and anomalous Hall effect in sputter-deposited Mn_4N films. It was revealed that the observed negative anomalous Hall conductivity (σ_(xy)) could be explained by two different coexisting magnetic structures, that is, a dominant magnetic structure with high K_u, contaminated by another structure with negligible K_u, owing to an imperfect degree of order of N. The observed transverse thermoelectric power (S_(ANE)) of +0.5 μV/K at 300 K yielded a transverse thermoelectric coefficient (α_(xy)) of +0.34 A/(m · K), which was smaller than the value predicted from the first-principles calculation. The interpretation for α_(xy) based on the first-principles calculations led us to conclude that the realization of single magnetic structure with high K_u and optimal adjustment of the Fermi level are promising approaches to enhance S_(ANE) in Mn_4N through the sign reversal of σ_(xy) and the enlargement of α_(xy) up to a theoretical value of 1.77 A/(m · K).
机译:Ferrimagnetic MN_4N是一种有希望的用于热通量传感器的材料,基于异常的麻醉效应(ANE),因为其相当大的单轴磁各向异性(K_U)和低饱和磁化强度(M_S)。我们在实验和理论上研究了溅射沉积的MN_4N薄膜中的ANE和异常霍尔效应。据揭示了观察到的负异常霍尔电导率(σ_(xy))可以通过两个不同的共存磁性结构来解释,即具有高k_u的主要磁性结构,由于不完美的程度,由另一个结构污染而被另一个结构污染N的顺序。在300k的观察到的横向热电功率(S_(ANE))为300k,产生+ 0.34A /(m·k)的横向热电系数(α_(xy)),其较小比从第一原理计算中预测的值。基于第一原理计算的α_(XY)的解释导致我们得出结论,通过高k_u的单一磁性结构的实现和FERMI水平的最佳调整是有希望通过标志反转来增强MN_4n中的S_(ANE)的方法Σ_(xy)和α_(xy)的放大达到1.77a /(m·k)的理论值。

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  • 来源
    《Applied Physics Letters》 |2021年第9期|092407.1-092407.6|共6页
  • 作者单位

    Research Center for Magnetic and Spintronic Materials National Institute for Materials Science Sengen 1-2-1 Tsukuba Ibaraki 305-0047 Japan;

    Research Center for Magnetic and Spintronic Materials National Institute for Materials Science Sengen 1-2-1 Tsukuba Ibaraki 305-0047 Japan;

    Research Center for Magnetic and Spintronic Materials National Institute for Materials Science Sengen 1-2-1 Tsukuba Ibaraki 305-0047 Japan;

    Research Center for Magnetic and Spintronic Materials National Institute for Materials Science Sengen 1-2-1 Tsukuba Ibaraki 305-0047 Japan;

    Research Center for Magnetic and Spintronic Materials National Institute for Materials Science Sengen 1-2-1 Tsukuba Ibaraki 305-0047 Japan PRESTO Japan Science and technology Agency Saitama 332-0012 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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