• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Physics Letters >Current-induced magnetization switching at charge-transferred interface between topological insulator (Bi,Sb)_2Te_3 and van der Waals ferromagnet Fe_3GeTe_2
【24h】

Current-induced magnetization switching at charge-transferred interface between topological insulator (Bi,Sb)_2Te_3 and van der Waals ferromagnet Fe_3GeTe_2

机译：电流诱导的磁化切换在拓扑绝缘体（BI，SB）之间的电荷转移接口_2TE_3和范德瓦尔斯Ferromagnet Fe_3Gete_2

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Ferromagnetic two-dimensional van der Waals materials attract enormous interest as a platform to explore spin-related quantum phenomena, especially in conjunction with other quantum materials. Topological insulator is one such candidate to form the junction, because the spin-polarized nature of the surface or interface Dirac states enables the highly efficient spin-charge conversion. Here, we report the current-driven magnetization switching in the bilayer film of a van der Waals ferromagnetic semimetal Fe_3GeTe_2 (FGT) and a topological insulator (Bi_(1-x)Sb_x)_2Te_3 (BST). We observed the current-induced magnetization switching via the Edelstein effect in a wide temperature range, whose threshold current density is as small as that reported for the heterostructure of FGT with a Pt layer. By analyzing the transport properties in heterostructures with different Fermi level (E_F) positions in the BST layer, we found that the E_F position of the charge-transferred interface Dirac states causes the significant variation of the threshold current density with a Bi/Sb ratio. The present result may promise spintronic phenomena in heterostructures of 2D van der Waals ferromagnets with topological insulators/semimetals.
机译：铁磁二维范德沃尔斯材料吸引了巨大的兴趣作为探索旋转相关量子现象的平台，特别是与其他量子材料相结合。拓扑绝缘体是形成结的一个这样的候选者，因为表面或界面的旋转极化性质可以实现高效的旋转电荷转换。在这里，我们在van der Waals铁磁性半仪Fe_3Gete_2（FGT）和拓扑绝缘体（Bi_（1-x）Sb_x）_2te_3（BST）中报告电流驱动的磁化切换。我们观察到电流诱导的磁化切换通过Edelstein效应在宽温度范围内，其阈值电流密度与PT层的FGT异质结构一样小。通过在BST层中分析具有不同FERMI水平（E_F）位置的异质结构的运输特性，我们发现电荷转移接口DIRAC状态的E_F位置导致阈值电流密度与BI / SB比率的显着变化。目前的结果可以承诺使用拓扑绝缘体/半塑料的2D范德瓦尔斯铁磁体的异质结构中的旋转性现象。

著录项

  • 来源
    《Applied Physics Letters》 |2021年第3期|032402.1-032402.4|共4页
  • 作者

    Reika Fujimura; Ryutaro Yoshimi; Masataka Mogi; Atsushi Tsukazaki; Minoru Kawamura; Kei S. Takahashi; Masashi Kawasaki; Yoshinori Tokura;

  • 作者单位

    Department of Applied Physics and Quantum Phase Electronics Center (QPEC) University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan;

    RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan;

    Department of Physics Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA;

    Institute for Materials Research Tohoku University Sendai Miyagi 980-8577 Japan;

    RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan;

    RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan;

    Department of Applied Physics and Quantum Phase Electronics Center (QPEC) University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan;

    Department of Applied Physics and Quantum Phase Electronics Center (QPEC) University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan Tokyo College University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号