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首页> 外文期刊>Applied Physics Letters >Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm
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Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm

机译：在470 nm波长下，非晶态氮氧化硅薄膜的光致发光的内部量子效率高于60％

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摘要

We reported the study on the photoluminescence internal quantum efficiency (PL IQE) and external quantum efficiency (PL EQE) from the amorphous silicon oxynitride (a-SiNO) films, which were fabricated by plasma-enhanced chemical vapor deposition followed by in situ plasma oxidation. We employed the direct measurement of absolute quantum efficiency within a calibrated integration sphere to obtain the PL EQE. Then, we calculated the PL IQE by combing the measured EQE and optical parameters of light extraction factor, reflectivity, and transmittance of the a-SiNO thin films. We also derived the PL QE through investigating the characteristic of the temperature dependent PL. These results show that the PL IQE as high as 60% has been achieved at peak wavelength of about 470 nm, which is much higher than that of Si nanocrystal embedded thin films.
机译：我们报道了由非晶氮氧化硅（a-SiNO）薄膜进行的光致发光内部量子效率（PL IQE）和外部量子效率（PL EQE）的研究，该薄膜是通过等离子增强化学气相沉积然后原位等离子氧化制备的。我们在校准积分球内直接测量绝对量子效率，以获得PL EQE。然后，我们通过结合测得的EQE和a-SiNO薄膜的光提取因子，反射率和透射率的光学参数来计算PL IQE。我们还通过研究温度相关PL的特性得出PL QE。这些结果表明，在约470nm的峰值波长处已经实现了高达60％的PL IQE，这比Si纳米晶体嵌入薄膜的峰值高得多。

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