All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices

Olson B.V.; Murray L.M.; Prineas J.P.; Flatte M.E.

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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices

机译：中波红外InAs / GaSb II型超晶格中垂直载流子传输的全光测量

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Time-resolved differential transmission measurements were used to investigate vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices (T2SLs). By optically generating excess carriers near one end of the mid-wave T2SL and measuring the transit time to a thin, lower-bandgap T2SL at the other end, the time-of-flight of vertically diffusing carriers was measured. Through investigation of both unintentionally doped and p-type T2SLs, the vertical hole and electron diffusion coefficients were measured to be 0.04?±?0.03?cm2/s and 4.7?±?0.5?cm2/s, corresponding to vertical mobilities of 6?±?5?cm2/Vs and 700?±?80?cm2/Vs, respectively, at a temperature of 77?K.

机译：时间分辨差分传输测量用于研究中波红外InAs / GaSb II型超晶格（T2SLs）中的垂直电荷载流子传输。通过在中波T2SL的一端附近光学生成多余的载流子，并测量到另一端的窄带隙低T2SL的传输时间，可以测量垂直扩散载流子的飞行时间。通过研究无意掺杂和p型T2SL，测得垂直空穴和电子扩散系数分别为0.04？±？0.03？cm 2 / s和4.7？±？0.5？cm / s > 2 / s，对应于垂直迁移率6？±？5？cm 2 / Vs和700？±？80？cm 2 / Vs，分别在77？K的温度下。

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来源
《Applied Physics Letters》 |2013年第20期|202101.1-202101.4|共4页
作者
Olson B.V.; Murray L.M.; Prineas J.P.; Flatte M.E.;
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Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA|c|;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-Ⅱ superlattices [J] . B. V. Olson, L M. Murray, J. P. Prineas, Applied Physics Letters . 2013,第20期

机译：中波红外InAs / GaSbⅡ型超晶格中垂直载流子传输的全光测量
2. Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate [J] . Deng Zhuo, Guo Daqian, Huang Jian, IEEE Journal of Quantum Electronics . 2019,第4期

机译：GaAs衬底上生长的n-B-p设计的中波红外InAs / GaSb II型超晶格光电探测器
3. Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate [J] . Deng Zhuo, Guo Daqian, Huang Jian, IEEE Journal of Quantum Electronics . 2019,第4期

机译：中波红外INAS / GASB Type-II超晶格光电探测器，N-B-P设计在GaAs衬底上生长
4. Two-Stage Interband Cascade Infrared Photodetector Based on InAs/GaSb Type-II Superlattice for High Speed Mid-Wave Infrared Applications [C] . Yaojiang Chen, Xuliang Chai, Zhiyang Xie, Asia Communications and Photonics Conference . 2019

机译：基于InAs / GaSb II型超晶格的两级带间级联红外光电探测器，用于高速中波红外应用
5. Vertical Carrier Transport Properties and Device Application of InAs/InAs1-xSbx Type-II Superlattice and a Water-Soluble Lift-Off Technology [D] . Tsai, Cheng-Ying. 2020

机译：垂直载波运输性能和装置应用INAS / INAS1-XSBX Type-II超晶格和水溶性剥离技术
6. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices [O] . Anh Minh Hoang, Arash Dehzangi, Sourav Adhikary, -1

机译：基于II型InAs / GaSb / AlSb超晶格的高性能偏置可选三色短波/中波/长波红外光电探测器
7. Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate [O] . Zhuo Deng, Daqian Guo, Jian Huang, 2019

机译：中波红外INAS / GASB Type-II超晶格光电探测器，N-B-P设计在GaAs衬底上生长

All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices

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