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首页> 外文期刊>Applied physics. B, Lasers and optics >Optical switching applications of ZnSe/MgF_2 photonic band gap structures based on thermal nonlinearities
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Optical switching applications of ZnSe/MgF_2 photonic band gap structures based on thermal nonlinearities

机译：基于热非线性的ZnSe / MgF_2光子带隙结构的光开关应用

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摘要

We investigate a thermo-optical device based on a ZnSe/MgF_2 multilayer and demonstrate the modulation of its optical reflectance around the band edge. An electrically induced temperature increase is responsible for the change of the refractive indices of the layers. As a result, the reflection spectrum shifts and the reflected signal decreases. The structure was grown using a thermal evaporation technique, and was designed in such a way that a band edge appears at 632.8 nm, i.e. accessible to a low-power He-Ne laser. The reflection characteristics were investigated as a function of the applied voltage and we found that the photonic band edge shifts by a maximum of 7 nm for an applied voltage of 90 V. Furthermore, different sets of measurements have shown that the spectral shift depends on the voltage squared, thus allowing experimental data analysis in terms of the thermally driven optical nonlinearity.
机译：我们研究了基于ZnSe / MgF_2多层的热光器件，并演示了其在带边缘附近的光反射率的调制。电感应的温度升高是各层折射率变化的原因。结果，反射光谱移动并且反射信号减小。使用热蒸发技术生长该结构，并以这样的方式设计该结构，使得带边缘出现在632.8 nm处，即低功率He-Ne激光器可以接近。研究了反射特性随施加电压的变化，我们发现，施加90 V电压时，光子带的边缘最大偏移了7 nm。此外，不同组的测量结果表明，光谱偏移取决于电压平方，因此可以根据热驱动的光学非线性进行实验数据分析。

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