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Selenization of Cu_2ZnSnS_4 thin film using a Se metal-organic source for solar cell applications

机译：使用硒化金属有机源将Cu_2ZnSnS_4薄膜硒化用于太阳能电池

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摘要

The effect of selenization temperature on the properties of Cu_2ZnSn(S,Se)_4 (CZTSSe) films using a Se metal-organic source was investigated. The metal-organic compound di-tert-butyl-selenide (DTBSe) was used as a Se source to selenize the Cu_2ZnSnS_4 (CZTS) films deposited by magnetron sputtering and crystallized by post-annealing on soda-lime glass. The selenization was conducted in the metal-organic chemical vapor deposition system and was carried out at temperature ranging from 300 to 390 ℃ for 30 min to prevent element loss, such as Zn, Sn. CZTS film was transformed into CZTSSe with various Se contents depending on the selenization temperature for 30 min. The crystalline properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy with a 514 nm laser. Energy-dispersive X-ray spectroscopy (EDS) was utilized for stoichio-metric characterization. The depth profiling of thin films was measured by auger electron spectroscopy (AES) to confirm distribution of the elements. And the band gap of CZTSSe thin films measured by UV-Vis-NIR spectrome-try varied from 1.5 to 0.95 eV along with content of Se.
机译：研究了硒化温度对使用硒金属有机源的Cu_2ZnSn（S，Se）_4（CZTSSe）薄膜性能的影响。使用金属有机化合物硒化二叔丁基硒化物（DTBSe）作为硒源，以硒化通过磁控溅射沉积并通过后退火在钠钙玻璃上结晶的Cu_2ZnSnS_4（CZTS）薄膜。硒化是在金属有机化学气相沉积系统中进行的，并在300至390℃的温度下进行30分钟，以防止锌，锡等元素损失。根据硒化温度，将CZTS膜转变为具有不同Se含量的CZTSSe 30分钟。通过使用514nm激光的扫描电子显微镜（SEM），X射线衍射（XRD）和拉曼光谱研究结晶性质。能量色散X射线光谱（EDS）用于化学计量表征。薄膜的深度轮廓通过俄歇电子能谱（AES）进行测量，以确认元素的分布。 UV-Vis-NIR光谱法测得的CZTSSe薄膜的带隙随Se含量的变化在1.5至0.95 eV之间。

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  • 来源
    《Applied Physics》 |2016年第8期|767.1-767.7|共7页
  • 作者

    Seong Man Yu; Kwang-Soo Lim; Arun Khalkar; Ji-Beom Yoo;

  • 作者单位

    Center for Human Interface Nano Technology (HINT), SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon 440-746, Republic of Korea;

    Center for Human Interface Nano Technology (HINT), SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon 440-746, Republic of Korea;

    Department of Nanoscience and Technology, K.T.H.M College, Gangapur Road, Nashik, Maharashtra State 422002, India;

    Center for Human Interface Nano Technology (HINT), SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon 440-746, Republic of Korea,Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon 440-746, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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