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Magnesium-doped zinc oxide nanorod-nanotube semiconductor/p-silicon heterojunction diodes

机译:镁掺杂的氧化锌纳米棒-纳米管半导体/ p-硅异质结二极管

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摘要

Nanostructured zinc oxide material is usable in electronic device applications such as light-emitting diodes, heterojunction diode, sensors, solar cell due to its interesting electrical conductivity and optical properties. Magnesium-doped zinc oxide nanorod (NR)-nanotube (NT) films were grown by microwave-assisted chemical bath deposition to fabricate ZnO-based heterojunction diode. It is found that ZnO hexagonal nanorods turn into hexagonal nanotubes when the Mg doping ratio is increased from 1 to 10 %. The values of the optical band gap for 1 % Mg-doped ZnO NR and 10 % Mg-doped ZnO NT films are found to be 3.14 and 3.22 eV, respectively. The n-ZnO:Mg/p-Si heterojunction diodes were fabricated. The diodes exhibited a rectification behavior with ideality factor higher than unity due to the presence of surface states in the junction and series resistance. The obtained results indicate that Mg doping improves the electrical and optical properties of ZnO.
机译:纳米结构的氧化锌材料因其有趣的导电性和光学性能而可用于电子设备应用,例如发光二极管,异质结二极管,传感器,太阳能电池。镁掺杂的氧化锌纳米棒(NR)-纳米管(NT)膜通过微波辅助化学浴沉积法生长,以制造基于ZnO的异质结二极管。发现当Mg掺杂比例从1增加到10%时,ZnO六角形纳米棒变成六角形纳米管。发现1%Mg掺杂的ZnO NR和10%Mg掺杂的ZnO NT薄膜的光学带隙值分别为3.14和3.22 eV。制作了n-ZnO:Mg / p-Si异质结二极管。由于结中存在表面状态和串联电阻,因此二极管表现出的整流行为的理想因数高于1。所得结果表明,Mg掺杂改善了ZnO的电学和光学性质。

著录项

  • 来源
    《Applied Physics》 |2016年第8期|733.1-733.12|共12页
  • 作者单位

    Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir, Turkey;

    Department of Chemistry, Faculty of Arts and Science, Eskisehir Osmangazi University, 26480 Eskisehir, Turkey;

    Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir, Turkey;

    Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir, Turkey;

    Department of Physics, Faculty of Science, Firat University, Elazig, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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