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首页> 外文期刊>Applied Physics >Hard coating of ultrananocrystalline diamondonhydrogenated amorphous carbon composite films on cemented tungsten carbide by coaxial arc plasma deposition
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Hard coating of ultrananocrystalline diamondonhydrogenated amorphous carbon composite films on cemented tungsten carbide by coaxial arc plasma deposition

机译：同轴电弧等离子体沉积在硬质合金碳化钨上超纳米晶金刚石/非氢化非晶碳复合膜的硬涂层

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摘要

Ultrananocrystalline diamond (UNCD)onhy-drogenated amorphous carbon (a-C) composite (UNCD/a-C) films were deposited on cemented carbide containing Co by coaxial arc plasma deposition. With decreasing substrate temperature, the hardness was enhanced accompanied by an enhancement in the sp~3/(sp~2 + sp~3). Energy-dispersive X-ray and secondary ion mass spectrometry spectroscopic measurements exhibited that the diffusion of Co atoms from the substrates into the films hardly occurs. The film deposited at room temperature exhibited the maximum hardness of 51.3 GPa and Young's modulus of 520.2 GPa, which evidently indicates that graphitization induced by Co in the WC substrates, and thermal deformation from sp~3 to sp~2 bonding are suppressed. The hard UNCD/a-C films can be deposited at a thickness of approximately 3 μm, which is an order larger than that of comparably hard a-C films. The internal compressive stress of the 51.3-GPa film is 4.5 GPa, which is evidently smaller than that of comparably hard a-C films. This is a reason for the thick deposition. The presence of a large number of grain boundaries in the film, which is a structural specific to UNCD/a-C films, might play a role in releasing the internal stress of the films.
机译：通过同轴电弧等离子体沉积将超纳米晶金刚石（UNCD）/非氢化无定形碳（a-C）复合材料（UNCD / a-C）膜沉积在含Co的硬质合金上。随着基底温度的降低，硬度提高，同时sp〜3 /（sp〜2 + sp〜3）增强。能量色散X射线和二次离子质谱分析法测量表明，几乎不会发生Co原子从基体扩散到薄膜中。在室温下沉积的薄膜具有51.3 GPa的最大硬度和520.2 GPa的杨氏模量，这显然表明Co在WC基板中引起的石墨化以及从sp〜3到sp〜2键的热变形得到了抑制。可以以约3μm的厚度沉积硬UNCD / a-C膜，该厚度比相当硬的a-C膜大一个数量级。 51.3-GPa薄膜的内部压缩应力为4.5 GPa，明显小于相当硬的a-C薄膜的内部压缩应力。这是沉积较厚的原因。膜中存在大量的晶界，这是UNCD / a-C膜特有的结构，可能在释放膜的内部应力中起作用。

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  • 来源
    《Applied Physics》 |2016年第8期|761.1-761.10|共10页
  • 作者

    Hiroshi Naragino; Mohamed Egiza; Aki Tominaga; Koki Murasawa; Hidenobu Gonda; Masatoshi Sakurai; Tsuyoshi Yoshitake;

  • 作者单位

    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580, Japan,Mechanical Engineering Department, Kafrelsheikh University, Kafrelsheikh 33516, Egypt;

    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580, Japan;

    OSG Corporation, 2-17 Shirakumo-cho, Toyokawa, Aichi 442-0018, Japan;

    OSG Corporation, 2-17 Shirakumo-cho, Toyokawa, Aichi 442-0018, Japan;

    OSG Corporation, 2-17 Shirakumo-cho, Toyokawa, Aichi 442-0018, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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