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首页> 外文期刊>Applied Physics >Solution-processed zinc oxide nanoparticles/single-walled carbon nanotubes hybrid thin-film transistors
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Solution-processed zinc oxide nanoparticles/single-walled carbon nanotubes hybrid thin-film transistors

机译：溶液处理的氧化锌纳米颗粒/单壁碳纳米管混合薄膜晶体管

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摘要

Solution-processed thin-film transistors (TFTs) are the essential building blocks for manufacturing the low-cost and large-area consumptive electronics. Herein, solution-processed TFTs based on the composites of zinc oxide (ZnO) nanoparticles and single-walled carbon nanotubes (SWCNTs) were fabricated by the methods of spin-coating and doctor-blading. Through controlling the weight of SWCNTs, the ZnO/SWCNTs TFTs fabricated by spin-coating demonstrated a field-effect mobility of 4.7 cm~2/Vs and a low threshold voltage of 0.8 V, while the TFTs devices fabricated by doctor-blading technique showed reasonable electrical performance with a mobility of 0.22 cm~2/Vs. Furthermore, the ion-gel was used as an efficient electrochemical gate dielectric because of its large electric double-layer capacitance. The operating voltage of all the TFTs devices is as low as 4.0 V. The research suggests that ZnO/SWCNTs TFTs have the potential applications in low-cost, large-area and flexible consumptive electronics, such as chemical-biological sensors and smart label.
机译：溶液处理的薄膜晶体管（TFT）是制造低成本和大面积消耗型电子产品的基本要素。在此，通过旋涂和刮涂的方法来制造基于氧化锌（ZnO）纳米颗粒和单壁碳纳米管（SWCNT）的复合材料的固溶处理TFT。通过控制SWCNT的重量，通过旋涂法制备的ZnO / SWCNTs TFT显示出4.7 cm〜2 / Vs的场效应迁移率和0.8 V的低阈值电压，而通过刮刀技术制备的TFTs器件显示合理的电气性能，迁移率为0.22 cm〜2 / Vs。此外，离子凝胶由于其大的双电层电容而被用作有效的电化学栅极电介质。所有TFTs器件的工作电压均低至4.0V。研究表明ZnO / SWCNTs TFTs在低成本，大面积且柔性的消费电子产品（如化学生物传感器和智能标签）中具有潜在的应用。

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  • 来源
    《Applied Physics》 |2016年第9期|841.1-841.6|共6页
  • 作者

    Fangmei Liu; Jia Sun; Chuan Qian; Xiaotao Hu; Han Wu; Yulan Huang; Junliang Yang;

  • 作者单位

    Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China;

    Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China;

    Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China;

    Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China;

    Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China;

    Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China;

    Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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