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机译:反应性直流磁控溅射沉积钛氧化物薄膜的相形成:氧分压和氮掺杂的影响
Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India;
Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India;
Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India;
Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India;
Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam 603102, India;
机译:DC磁控溅射沉积的C掺杂Ti-O薄膜退火期间钛氧化钛对锐钛矿和金红石相的影响
机译:反应磁控溅射在不同氧分压下沉积的相纯M_1-VO_2薄膜的室温光学常数和带隙演化
机译:反应磁控溅射在不同氧分压下沉积的纯M1-VO2相薄膜的室温光学常数和带隙演化
机译:总反应直流磁控溅射沉积的TiO_2薄膜结构和亲水性的影响
机译:通过反应磁控溅射沉积的亚稳态钛(0.5)铝(0.5)铝合金薄膜的物理性能。
机译:氧浓度对超薄射频磁控溅射沉积铟锡氧化物薄膜作为光伏器件上电极的性能的影响
机译:直流反应磁控溅射沉积的TiO2薄膜的氧分压依赖性