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首页> 外文期刊>Applied Physics A: Materials Science & Processing >Influence of Y~(3+) doping on the high-temperature transport mechanism and thermoelectric response of misfit-layered Ca_3Co_4O_9
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Influence of Y~(3+) doping on the high-temperature transport mechanism and thermoelectric response of misfit-layered Ca_3Co_4O_9

机译：Y〜（3+）掺杂对错配层Ca_3Co_4O_9的高温输运机理和热电响应的影响

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摘要

The high-temperature transport and thermoelectric characteristics of Ca_(3-x)Y_xCo_4O_9 (x = 0-0.75) series were studied up to 1000 K. The results reveal that the substitution of Y~(3+) for Ca~(2+) not only increases resistivity but also gradually alters the transport mechanism. The localization of carriers narrows bandwidth, which induces the evolution of the system from metal to variable-range hopping semiconductor and then to thermally activated semiconductor. The increasing thermopower with doping originates from the reduction of carrier concentration along with enhanced electronic correlations. Thermoelectric figure of merit ZT of Ca_3Co_4O_9 system is improved by Y doping. However, the optimal thermoelectric performance is found to only exist at the critical doping level where doping-induced metal-semiconductor transition occurs. This result suggests an intrinsic correlation between transport mechanism and thermoelectric response in this system.
机译：研究了Ca_（3-x）Y_xCo_4O_9（x = 0-0.75）系列在1000 K以下的高温输运和热电特性。结果表明，用Y〜（3+）代替Ca〜（2+ ）不仅增加了电阻率，而且逐渐改变了传输机理。载流子的位置使带宽变窄，这导致系统从金属演化到变程跳跃半导体，再发展到热激活半导体。随着掺杂而增加的热功率源于载流子浓度的降低以及增强的电子相关性。通过掺杂Y可以改善Ca_3Co_4O_9体系的热电性能ZT。然而，发现最佳热电性能仅存在于发生掺杂诱导的金属-半导体转变的临界掺杂水平。该结果表明在该系统中，传输机制与热电响应之间存在固有的相关性。

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    Yang Wang; rnYu Sui; rnJinguang Cheng; rnXianjie Wang; Wenhui Su; rnHongjin Fan;

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    Center for Condensed Matter Science and Technology (CCMST), Department of Physics, Harbin Institute of Technology, Harbin 150001, People's Republic of China Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore;

    rnCenter for Condensed Matter Science and Technology (CCMST), Department of Physics, Harbin Institute of Technology, Harbin 150001, People's Republic of China International Center for Materials Physics, Academia Sinica, Shenyang 110015, People's Republic of China;

    rnCenter for Condensed Matter Science and Technology (CCMST), Department of Physics, Harbin Institute of Technology, Harbin 150001, People's Republic of China;

    rnCenter for Condensed Matter Science and Technology (CCMST), Department of Physics, Harbin Institute of Technology, Harbin 150001, People's Republic of China;

    rnCenter for Condensed Matter Science and Technology (CCMST), Department of Physics, Harbin Institute of Technology, Harbin 150001, People's Republic of China International Center for Materials Physics, Academia Sinica, Shenyang 110015, People's Republic of China;

    rnDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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