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Enhanced thermoelectric properties of the Lu-doped and CNT-dispersed Bi_2Te_3 alloy

机译：掺Lu和CNT分散的Bi_2Te_3合金的增强的热电性能

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摘要

Bi2Te3 and Lutetium-doped Lu0.1Bi1.9Te3 nanopowders were prepared by the hydrothermal method. Different amounts of carbon nanotubes (CNTs) were dispersed into Lu0.1Bi1.9Te3 nanopowders and hot pressed into bulk samples with nominal chemical formula of Lu0.1Bi1.9Te3 + xwt% CNT (x=0, 0.05, 0.1, 0.5, 1) to assess the effects of lutetium doping and CNT dispersing on the thermoelectric properties. The electrical resistivity decreased because of the increase of the carrier concentration and carrier mobility at a low CNTs content. Herein, a small amount of CNTs were used as conducting filler to provide a free path of carriers which would lead to an increase of carrier mobility, though a large number of CNTs mainly played an energy-filtering effect. The thermal conductivity of Lu0.1Bi1.9Te3 + xwt% CNT nanocomposite showed an evident decrease, which resulted from the enhanced phonon scattering by the point defects caused by Lu doping and the interfaces between Lu0.1Bi1.9Te3 and CNTs. Due to the decrease in the electrical resistivity and thermal conductivity, the figure of merit (ZT) of Lu0.1Bi1.9Te3 + 0.05wt% CNT nanocomposite was higher than that of Bi2Te3 and Lu0.1Bi1.9Te3 when the temperature was below 473K.
机译：采用水热法制备了Bi2Te3和掺Lu的Lu0.1Bi1.9Te3纳米粉。将不同数量的碳纳米管（CNT）分散到Lu0.1Bi1.9Te3纳米粉中，然后热压成标称化学式为Lu0.1Bi1.9Te3 + xwt％CNT（x = 0，0.05，0.1，0.5，1）的块状样品评估掺杂和CNT分散对热电性能的影响。电阻率降低是由于在低CNT含量下载流子浓度和载流子迁移率增加。这里，少量的CNT被用作导电填充剂以提供载流子的自由路径，这将导致载流子迁移率的增加，尽管大量的CNT主要起到能量过滤作用。 Lu0.1Bi1.9Te3 + xwt％CNT纳米复合材料的热导率显示出明显的下降，这是由于Lu掺杂和Lu0.1Bi1.9Te3与CNTs之间的界面引起的点缺陷导致声子散射增强所致。由于电阻率和导热率的降低，当温度低于473K时，Lu0.1Bi1.9Te3 + 0.05wt％CNT纳米复合材料的品质因数（ZT）高于Bi2Te3和Lu0.1Bi1.9Te3。

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  • 来源
    《Applied Physics》 |2019年第2期|126.1-126.7|共7页
  • 作者

    Cao Ruijuan; Zhu Zheng; Li Xin-Jian; Hu Xing; Song Hongzhang;

  • 作者单位

    Zhengzhou Univ, Sch Phys & Engn, Minist Educ, Key Lab Mat Phys, Zhengzhou 450001, Henan, Peoples R China;

    Zhengzhou Univ, Sch Phys & Engn, Minist Educ, Key Lab Mat Phys, Zhengzhou 450001, Henan, Peoples R China;

    Zhengzhou Univ, Sch Phys & Engn, Minist Educ, Key Lab Mat Phys, Zhengzhou 450001, Henan, Peoples R China;

    Zhengzhou Univ, Sch Phys & Engn, Minist Educ, Key Lab Mat Phys, Zhengzhou 450001, Henan, Peoples R China;

    Zhengzhou Univ, Sch Phys & Engn, Minist Educ, Key Lab Mat Phys, Zhengzhou 450001, Henan, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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