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首页> 外文期刊>Applied Physics >Charge carrier modulation in dual-gated graphene field effect transistor using honey as polar organic gate dielectric
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Charge carrier modulation in dual-gated graphene field effect transistor using honey as polar organic gate dielectric

机译：使用蜂蜜作为极性有机栅极电介质的双门设计石墨烯场效应晶体管的电荷载波调制

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摘要

Charge carrier modulation of graphene-based field effect transistors (GFETs) is the key factor to utilize and enhance its fascinating properties for technological applicability. Here, we have demonstrated the gate-dependent tweaking of electrical properties of graphene devices by application of honey as a top gate dielectric. Electrical characterization of dual-gated GFET is elucidated at different top and back-gate voltages. A charge neutrality point is fine-tuned by varying the top gate voltage (V_(tg))from + 3 to - 4 V. The change in carrier density is clearly observed from 3.66 × 10~(12) to 2.15 × 10~(11) cm~(-2) at+ 3 to - 4 V_(tg). The charge carrier mobility of gel-gated GFET is increased significantly to 5376 cm~2/V · sec by increasing top-gate voltages up to - 4 V. Result demonstrates a cost-effective, facile and rapid fabrication of top-gated devices and suggest natural dielectric materials as good candidate to replace conventionally available gate dielectrics in FET technology.
机译：基于石墨烯的场效晶体管（GFET）的电荷载体调制是利用和增强其迷人性能以进行技术适用性的关键因素。在这里，我们已经证明了通过将蜂蜜作为顶栅电介质施加蜂蜜来依赖于石墨烯装置的电性能的栅极依赖性调整。双门控GFET的电学表征在不同的顶部和后栅电压下阐明。通过改变+ 3至-4V的顶部栅极电压（V_（Tg））来微调电荷中性点。从3.66×10〜（12）至2.15×10〜（ 11）CM〜（-2）+ 3至-4 V_（TG）。通过增加高达-4 V的顶部栅极电压，凝胶门控GFET的电荷载流子迁移率显着增加到5376cm〜2 / V··秒。结果表明了一种成本效益，容易和快速的顶门设备的制造建议天然介电材料作为良好的候选者，以替换FET技术的常规可用栅极电介质。

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  • 来源
    《Applied Physics》 |2021年第6期|438.1-438.7|共7页
  • 作者

    Meshal Alzaid; Muhammad Zahir Iqbal; Syed Shabhi Haider; Sana Zakar; Sana Khan; C. Bilel; W. S. Mohamed; N. M. A. Hadia; Fai Alsalh;

  • 作者单位

    Department of Physics College of Sciences Jouf University P.O. Box 2014 Sakaka Saudi Arabia;

    Nanotechnology Research Laboratory Faculty of Engineering Sciences GIK Institute of Engineering Sciences and Technology Khyber Pakhtunkhwa Topi 23640 Pakistan;

    Nanotechnology Research Laboratory Faculty of Engineering Sciences GIK Institute of Engineering Sciences and Technology Khyber Pakhtunkhwa Topi 23640 Pakistan;

    Nanotechnology Research Laboratory Faculty of Engineering Sciences GIK Institute of Engineering Sciences and Technology Khyber Pakhtunkhwa Topi 23640 Pakistan;

    Nanotechnology Research Laboratory Faculty of Engineering Sciences GIK Institute of Engineering Sciences and Technology Khyber Pakhtunkhwa Topi 23640 Pakistan;

    Department of Physics College of Sciences Jouf University P.O. Box 2014 Sakaka Saudi Arabia;

    Department of Physics College of Sciences Jouf University P.O. Box 2014 Sakaka Saudi Arabia;

    Department of Physics College of Sciences Jouf University P.O. Box 2014 Sakaka Saudi Arabia;

    Department of Physics College of Sciences Jouf University P.O. Box 2014 Sakaka Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Honey; Gate dielectric; Carrier density; Mobility;

    机译：蜂蜜;栅极电介质;载体密度;移动性;

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