Lifetime Specifics of Nonequilibrium Carriers in Photoelectric Cells Based on Gallium Arsenide Obtained via the Czochralski Method

A. Yu. Leiderman; M. M. Khashaev

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Lifetime Specifics of Nonequilibrium Carriers in Photoelectric Cells Based on Gallium Arsenide Obtained via the Czochralski Method

机译：通过直拉法获得的基于砷化镓的光电电池非平衡载体的生命周期特征

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The recombination processes that determine the lifespan of nonequilibrium charge carriers in gallium arsenide that is grown via the Czochralski method and contains recombination complexes formed by shallow donors and vacancies are analyzed. The recombination through such complexes at photoexcitation may reach saturation, and this may result in a linear dependence of the lifespan on the excitation level and superlinear growth in the short-circuit current of a photoelectric cell with increasing excitation level.

机译：分析了决定通过Czochralski方法生长并包含浅施主和空位形成的复合复合物的砷化镓中非平衡电荷载流子寿命的重组过程。在光激发下通过这种配合物的重组可能达到饱和，并且这可能导致寿命与激发能级呈线性关系，并且随着激发能级的提高，光电电池的短路电流会超线性增长。

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来源
《Applied solar energy》 |2013年第4期|244-247|共4页
作者
A. Yu. Leiderman; M. M. Khashaev;
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作者单位

Institute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan;

Institute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan;

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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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1. Specific Features of the Formation of Dislocation Structure in Gallium Arsenide Single Crystals Obtained by the Czochralski Method [J] . Parfenteva I. B., Pugachev B. V., Pavlov V. F., Crystallography reports . 2017,第2期

机译：通过Czochralski方法获得的砷化镓单晶脱位结构形成的具体特征
2. Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation [J] . Tannoury C., Billet M., Coinon C., Electronics Letters . 2020,第17期

机译：低温生长的镓砷化镓光电导体，具有偶像载体寿命和光响应达到1550 nm CW激励下的25 mA / W.
3. Measuring Femtosecond Lifetimes of Free Charge Carriers in Gallium Arsenide [J] . A. E. Levashova, A. A. Pastor, P. Yu. Serdobintsev, Technical physics letters: Letters to the Russian journal of applied physics . 2014,第6期

机译：测量砷化镓中免费电荷载体的飞秒寿命
4. Minority carrier lifetime measurement in nanowire based solar cells by a reverse recovery transient method [C] . M. Daanoune, D. Kohen, A. Kaminski-Cachopo European Materials Research Society Symposium . 2015

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5. Determination of carrier lifetime in 1.3 micron indium gallium arsenide/gallium arsenide QD lasers from subthreshold optical frequency response techniques. [D] . Vangapally, Vishnu. 2005

机译：使用亚阈值光学频率响应技术确定1.3微米砷化铟镓/砷化镓QD激光器中的载流子寿命。
6. Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers [O] . Chengxin Guo, Lin Zhang, Matthew M. Sartin, 2019

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机译：反向恢复瞬态法测量纳米线基太阳能电池中的少数载流子寿命

Lifetime Specifics of Nonequilibrium Carriers in Photoelectric Cells Based on Gallium Arsenide Obtained via the Czochralski Method

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