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首页> 外文期刊>Applied Spectroscopy >Characterization of V-defects in InGaN Single Quantum Well Films at the Nanometer Level by High-Spatial-Resolution Cathodoluminescence Spectroscopy
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Characterization of V-defects in InGaN Single Quantum Well Films at the Nanometer Level by High-Spatial-Resolution Cathodoluminescence Spectroscopy

机译：高空间分辨率阴极发光光谱法表征纳米级InGaN单量子阱膜中的V缺陷

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We have developed a new scanning electron microscope (SEM) equipped with a Schottky emission (SE) gun that produces a high probe current at an acceleration voltage of less than 5 kV and a cathodoluminescence (CL) spectroscopic system (SE-SEM-CL) equipped with an SE gun and a newly designed parabolic mirror that has a very short working distance of 9 mm in order to enhance the spatial resolution of CL spectroscopy. We have studied CL spectral variations in the vicinity of V-defects in InGaN single quantum well (SQW) film by measuring its CL spectra at the nanometer level, using our SE-SEM-CL system. It has been found that the peak intensity and peak wavelength of the CL peak around 454 nm assigned to the quantum wells emission of the InGaN SQW layer significantly change in the vicinity of the V-defects. We have considered that the change in the peak wavelength is mainly caused by a change in the In content in the InGaN SQW layer. Our SE-SEM-CL has a spatial resolution of less than 40 nm for the InGaN SQW layer.
机译：我们开发了一种新型扫描电子显微镜（SEM），该电子显微镜配备了肖特基发射（SE）枪，该枪可在小于5 kV的加速电压下产生高探针电流，并且具有阴极发光（CL）光谱系统（SE-SEM-CL）配备了SE喷枪和新设计的抛物面反射镜，该抛物面反射镜的工作距离很短，仅为9 mm，以提高CL光谱的空间分辨率。我们通过使用我们的SE-SEM-CL系统在纳米级测量其CL光谱，研究了InGaN单量子阱（SQW）膜中V缺陷附近的CL光谱变化。已经发现，分配给InGaN SQW层的量子阱发射的454nm附近的CL峰的峰强度和峰波长在V缺陷附近显着改变。我们已经考虑到峰值波长的变化主要是由InGaN SQW层中In含量的变化引起的。我们的SE-SEM-CL对InGaN SQW层的空间分辨率小于40 nm。

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    《Applied Spectroscopy》 |2008年第1期|86-90|共5页
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