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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Pinning Efficiency of One-Dimensional Artificial Pinning Centers in YBa2Cu3O7-x Thin Films
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Pinning Efficiency of One-Dimensional Artificial Pinning Centers in YBa2Cu3O7-x Thin Films

机译:YBa 2 Cu 3 O 7-x 薄膜一维人工钉扎中心的钉扎效率

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摘要

BaZrO3 (BZO) and BaHfO3 (BHO) form the comparable diameter similar to 5-6 nm of one-dimensional artificial pinning centers (1-D APCs) in YBa2 Cu-3 O7-x(YBCO) film. However, the lattice mismatch similar to 7.7% at the BZO/YBCO interface is slightly higher than similar to 7.1% at the BHO/YBCO interface. This leads to a much reduced interface dislocation density, and coherent interface at the BHO/YBCO film that has found a critical effect on the pinning efficiency of the 1-D APCs. This paper thus presents a quantitative comparison of pinning efficiency of single doped 4.0 vol.% BZO/BHO (SD) and double doped 4.0 vol.% BZO(BHO) + 3.0 vol.% Y2O3 doped (DD) YBCO films. A significantly higher pinning efficiency in terms of a maximum pinning force density F-p,F-max similar to 182 GN/m(3) at H-max > 9.0 T for BHO SD film may he due to coherent interface. This is about 2.5 times higher than that of its BZO SD counterparts at 65 K. In addition, the ratio of H-max and H*(accommodation field determined from the areal density of the 1-D APCs using TEM) is calculated about 0.74 and 0.53 for BHO SD and BZO SD films, respectively. This value is about 0.65 and 0.82 for BHO DD and BZO DD films, respectively at 65 K.
机译:BaZrO3(BZO)和BaHfO3(BHO)在YBa2 Cu-3 O7-x(YBCO)膜中形成的可比直径类似于5-6 nm的一维人工钉扎中心(1-D APC)。但是,与BZO / YBCO界面处的7.7%相似的晶格失配略高于在BHO / YBCO界面处的7.1%的相似度。这导致界面位错密度大大降低,并且BHO / YBCO膜处的相干界面对1-D APC的钉扎效率产生了关键影响。因此,本文提出了定量比较单掺杂4.0vol。%BZO / BHO(SD)和双掺杂4.0vol。%BZO(BHO)+ 3.0 vol。%Y2O3掺杂(DD)YBCO薄膜的钉扎效率的方法。对于BHO SD膜而言,在最大钉扎力密度F-p,F-max类似于H-max> 9.0 T时在182 GN / m(3)时,钉扎效率明显更高。这是在65 K时其BZO SD对应物的2.5倍左右。此外,H-max和H *的比值(通过TEM使用一维APC的面密度确定的适应场)约为0.74。 BHO SD和BZO SD胶片分别为0.53和0.53。对于BHO DD和BZO DD膜,此值分别在65 K下约为0.65和0.82。

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