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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Performance of photon-number resolving transition-edge sensors with integrated 1550 nm resonant cavities
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Performance of photon-number resolving transition-edge sensors with integrated 1550 nm resonant cavities

机译：具有集成的1550 nm谐振腔的光子数分辨过渡边缘传感器的性能

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摘要

Many quantum-information applications require high-efficiency, low-noise, single-photon detectors that operate at visible and near-infrared wavelengths. The tunable superconducting critical temperature and anomalously low electron-phonon coupling of tungsten make it a suitable material for the fabrication of transition-edge sensors (TESs) that meet these requirements. The quantum efficiency of a typical tungsten TES detector, intrinsically around 15% at 1550 nm, can be increased by placing the tungsten detector in a resonant cavity, but the performance of a device embedded in a cavity has not been tested previously. We demonstrate that the presence of the cavity does not adversely affect the sensitivity or response time, and we report on the device characteristics of a new generation of tungsten TESs with greater than 80% quantum efficiency at 1550 nm.
机译：许多量子信息应用需要在可见光和近红外波长下工作的高效，低噪声，单光子检测器。钨的可调谐超导临界温度和异常低的电子-声子耦合使其成为制造满足这些要求的过渡边缘传感器（TES）的合适材料。通过将钨探测器放置在谐振腔中，可以提高典型的钨TES检测器的量子效率，在1550 nm时本质上约为15％，但是以前尚未测试嵌入腔中的设备的性能。我们证明腔体的存在不会对灵敏度或响应时间产生不利影响，并且我们报告了在1550 nm处具有大于80％量子效率的新一代钨TES的器件特性。

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