Graphical abstract<'/> The effect of defect emissions on enhancement photocatalytic performance of ZnSe QDs and ZnSe/rGO nanocomposites
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The effect of defect emissions on enhancement photocatalytic performance of ZnSe QDs and ZnSe/rGO nanocomposites

机译：缺陷发射对增强ZnSe QDs和ZnSe / rGO纳米复合材料光催化性能的影响

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Graphical abstractDisplay OmittedHighlights•Effect of different defect emissions of ZnSe QDs on photocatalytic performance was investigated.•Annealing effects of ZnSe QDs on photocatalytic performance was investigated.•Graphene role as an additive to enhance photocatalytic performance of ZnSe QDs was studied.AbstractA systematic study about the origin of defects emission of ZnSe structure was conducted by photoluminescence (PL) spectrometer at room temperature. It was observed that different intermediate energy levels in band-gap space of ZnSe structure were generated by different defects such as Se-, Zn-vacancies, Se-, Zn-interstitials, and surface states. Effects of these defects on the photocatalytic performance of ZnSe quantum dots (QDs) and ZnSe/graphene nanocomposites were investigated. The pristine ZnSe QDs and ZnSe/graphene nanocomposites were synthesized by a co-precipitation method. The PL spectra of the samples showed four emissions from four regions of the visible spectrum such as violet, green, orange, and red emissions. The violet emission was associated with the near-band-edge (NBE) of the ZnSe nanostructures, while, the other emissions were related to different defects of ZnSe structures. Annealing the samples in the H2atmosphere caused to increase orange emission intensity and indicated that origin of orange emission was a donor-acceptor pair (DAPs) related to singly positively charged Se-vacancies (VSe) to singly negatively charged zinc vacancy (VZn−). Photocatalytic study of the samples to remove the methylene blue (MB) dye showed that the photocatalytic performance of the samples improved by graphene as an additive and increasing the orange emission intensity.
机译： 图形摘要 < ce：simple-para>省略显示 突出显示 • 不同缺陷的影响研究了ZnSe QDs的释放对光催化性能的影响。 • ZnSe量子点对光催化性能的退火作用 • 摘要 用ZnO结构的光致发光（PL）光谱仪对ZnSe结构的缺陷发射的起源进行了系统研究。室内温度。观察到，ZnSe结构的带隙空间中的不同中间能级是由不同的缺陷产生的，例如Se-，Zn-空位，Se-，Zn-间隙和表面态。研究了这些缺陷对ZnSe量子点（QDs）和ZnSe /石墨烯纳米复合材料光催化性能的影响。通过共沉淀法合成了原始的ZnSe QDs和ZnSe /石墨烯纳米复合材料。样品的PL光谱显示了来自可见光谱的四个区域的四个发射，例如紫色，绿色，橙色和红色发射。紫光发射与ZnSe纳米结构的近带边缘（NBE）相关，而其他发射与ZnSe结构的不同缺陷有关。对H 2 大气中的样品进行退火会导致橙色发射强度增加，并表明橙色发射的起源是一个供体-受体对（DAP），与单个正相关带电的硒空位（ V Se ）单个带负电的锌空位（ V Zn − ）。对样品进行光催化去除亚甲基蓝（MB）染料的研究表明，石墨烯作为添加剂并提高橙色发射强度可以提高样品的光催化性能。

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