Graphical abstract<'/> van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO_2/Si
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van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO_2/Si

机译：非晶SiO_2 / Si上单晶石墨烯缓冲层上SnS膜的Van der Waals外延

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Graphical abstractDisplay OmittedHighlights•Azimuthal RHEED reciprocal space map distinguishes single and poly-crystal graphene.•SnS film grown on graphene buffered amorphous substrate through van der Waals epitaxy.•Near surface structure of SnS film on single crystal graphene has better quality.•X-ray pole figure determines the number of orientation domains and the preferred orientation in SnS film.AbstractConventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.
机译： 图形摘要 < ce：simple-para>省略显示 突出显示 • 方位角RHEED倒数空间映射区分单晶和多晶石墨烯。 • 通过石墨烯缓冲的无定形衬底上生长的SnS膜通过范德华磊晶。 • 单晶石墨烯上SnS膜的近表面结构具有更好的质量。 • X射线极图确定了SnS胶片中取向域的数量和首选取向。 摘要 常规的异质外延膜通常在晶格和对称匹配的单晶衬底上生长。我们证明了正交晶型SnS膜（约500homnm厚）在单晶单层石墨烯上的外延生长，该单晶石墨烯转移到非晶SiO 2 / Si衬底上。使用X射线极图分析，我们检查了在单晶石墨烯上生长的SnS膜的结构，质量和外延关系，并将其与在商业多晶石墨烯上生长的SnS膜进行了比较。我们表明，在单晶和多晶石墨烯上生长的SnS膜具有两组取向域。但是，当在单晶石墨烯上生长时，SnS膜的结晶度和晶粒尺寸会提高。反射高能电子衍射测量表明，与整个膜相比，近表面织构具有更多的相。膜的表面纹理将影响在其顶部生长的膜的生长和质量以及形成的界面。我们的结果提供了另一种方法，可通过单晶石墨烯缓冲层在非晶衬底上生长异质外延膜。这种生长高质量外延薄膜的策略在光电领域具有潜在的应用。

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  • 来源
    《Applied Surface Science》 |2018年第30期|759-768|共10页
  • 作者

    Yu Xiang; Yunbo Yang; Fawen Guo; Xin Sun; Zonghuan Lu; Dibyajyoti Mohanty; Ishwara Bhat; Morris Washington; Toh-Ming Lu; Gwo-Ching Wang;

  • 作者单位

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

    Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute,Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute;

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  • 正文语种 eng
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  • 关键词

    van der Waals heteroepitaxy; SnS film; Graphene; AFM; RHEED; X-ray pole figure;

    机译：范德华异质外延;SnS膜;石墨烯;AFM;RHEED;X射线极图;

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