Highlights<'/> Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices
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首页> 外文期刊>Applied Surface Science >Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices
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Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

机译：用于下一代柔性器件的射频叠加直流溅射铝掺杂ZnO薄膜中高载流子迁移率和低残余应力的起源

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Highlights•Investigated origin of high carrier mobility and low residual stress in AZO thin films for next generation flexible devices.•Superimposing RF power onto DC Power controlled energy and flux of incident ions during sputtering process.•Mixed RF/(RF+DC) sputtering process results in better crystallinity and low residual stress.•XPS study shows a variation in defect density in AZO thin film with different RF/(RF+DC) ratios.•The defects finally migrate to grain boundaries and controls the carrier mobility.AbstractIn this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.
机译： 突出显示 • 研究了下一代柔性器件的AZO薄膜中高载流子迁移率和低残余应力的起源。 • 将RF功率叠加到DC Power控制的能量和磁通量上 • RF /（RF + DC）混合溅射工艺可提高结晶度和降低残余应力。 • XPS研究表明，具有不同RF /（RF + DC）比的AZO薄膜中缺陷密度的变化。 • 缺陷最终迁移到晶界并控制载流子迁移率。 摘要 在这项工作中，高能离子的能量和通量通过RF叠加直流溅射工艺进行控制，以增加晶粒尺寸并抑制晶界Al掺杂的ZnO（AZO）薄膜中具有最小残余应力的电势。通过保持总功率相同，以不同的RF /（RF + DC）比沉积AZO薄膜，并研究其电，光，结构和纳米级晶界电势。随着RF /（RF showed + DC）比从0.0纯DC增加到1.0纯RF，所有的AZO薄膜都显示出高结晶度和沿（002）取向，并具有峰位移。该峰位移与生长的薄膜中的高残余应力相关。与其他AZO薄膜相比，在RF /（RF + DC）为0.75的情况下生长的AZO薄膜显示出高电子迁移率，低残余应力和大晶粒尺寸。使用开尔文探针力显微镜法在所有AZO薄膜中绘制了纳米级晶界电势，并且观察到载流子迁移率不仅受晶粒尺寸控制，而且受晶界电势控制。 XPS分析证实了氧空位和锌间隙的变化，这解释了以0.75 RF /（RF + DC）比沉积的AZO薄膜的低晶界势和高载流子迁移率的起源。这项研究提出了一种控制晶粒尺寸和晶界电位的新方法，以进一步调整用于下一代柔性和光电器件的AZO薄膜的光电机械性能。

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