Highlights<'/> Reference binding energies of transition metal carbides by core-level χ-ray photoelectron spectroscopy free from Ar~+ etching artefacts
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首页> 外文期刊>Applied Surface Science >Reference binding energies of transition metal carbides by core-level χ-ray photoelectron spectroscopy free from Ar~+ etching artefacts
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Reference binding energies of transition metal carbides by core-level χ-ray photoelectron spectroscopy free from Ar~+ etching artefacts

机译：不含Ar〜+刻蚀伪影的核能级χ射线光电子能谱法对过渡金属碳化物的参考结合能

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Highlights•XPS binding energies (BEs) of group IVb-VIb transition metal carbides (TMCs) are reported.•TMCs are grown under the same conditions and analyzed in the same instrument.•Core level spectra free from Ar+-etch artefacts are presented.•For each row in the periodic table C 1s BE increases from left to right.•C 1s BE decreases linearly with increasing carbide/metal melting point ratio.AbstractWe reportx-ray photoelectron spectroscopy (XPS) core level binding energies (BE’s) for the widely-applicable groups IVb-VIb transition metal carbides (TMCs) TiC, VC, CrC, ZrC, NbC, MoC, HfC, TaC, and WC. Thin film samples are grown in the same deposition system, by dc magnetron co-sputtering from graphite and respective elemental metal targets in Ar atmosphere. To remove surface contaminations resulting from exposure to air during sample transfer from the growth chamber into the XPS system, layers are either (i) Ar+ion-etched or (ii) UHV-annealedin situprior to XPS analyses. High resolution XPS spectra reveal that even gentle etching affects the shape of core level signals, as well as BE values, which are systematically offset by 0.2–0.5 eV towards lower BE. These destructive effects of Ar+ion etch become more pronounced with increasing the metal atom mass due to an increasing carbon-to-metal sputter yield ratio. Systematic analysis reveals that for each row in the periodic table (3d,4d, and5d) C 1s BE increases from left to right indicative of a decreased charge transfer from TM to C atoms, hence bond weakening. Moreover, C 1s BE decreases linearly with increasing carbide/metal melting point ratio. Spectra reported here, acquired from a consistent set of samples in the same instrument, should serve as a reference for true deconvolution of complex XPS cases, including multinary carbides, nitrides, and carbonitrides.
机译： 突出显示 • 报告了IVb-VIb组过渡金属碳化物（TMC）的XPS结合能（BE）。 • TMC在相同条件下生长并在 • + -蚀刻伪像的核心能级光谱。 < ce：list-item id =“ lsti0020”> • 对于每一行n周期表C 1s BE从左向右增加。 • C 1s BE随着碳化物/金属熔点比的增加而线性降低。 摘要 我们报告 x IVb-VIb过渡金属碳化物（TMC）TiC，VC，CrC，ZrC，NbC，MoC，HfC，TaC和WC的>射线光电子能谱（XPS）核心能级结合能（BE's）。薄膜样品是在同一个沉积系统中通过在Ar气氛中从石墨和各个元素金属靶材共同溅射直流磁控管来生长的。为了消除在样品从生长室转移到XPS系统期间暴露于空气中造成的表面污染，对各层进行（i）离子蚀刻Ar + 或（ ii）在XPS分析之前就地进行HV退火。高分辨率XPS光谱显示，即使是温和的蚀刻也会影响核心能级信号的形状以及BE值，这些值系统地向较低的BE偏移0.2-0.5 eV。由于碳与金属的溅射产率的增加，随着金属原子质量的增加，Ar + 离子蚀刻的这些破坏性作用变得更加明显。系统分析显示，元素周期表中的每一行（ 3d ， 4d 和 5d ）C 1s BE从左到右增加，表明从TM到C原子的电荷转移减少，因此键弱。而且，C 1s BE随着碳化物/金属熔点比的增加而线性降低。此处报告的光谱是从同一台仪器中的一组一致的样本中获得的，应作为对复杂XPS案例（包括多元碳化物，氮化物和碳氮化物）进行真正去卷积的参考。

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