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首页> 外文期刊>Applied Surface Science >Enhanced photoelectrochemical performance of Si nanowires by etching a single-crystal Si(100) wafer
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Enhanced photoelectrochemical performance of Si nanowires by etching a single-crystal Si(100) wafer

机译：通过蚀刻单晶Si（100）晶片增强了Si纳米线的光电化学性能

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摘要

Si photoelectrodes with two different morphology, including the porous Si (PSi) and Si nanowires (SiNWs), have been prepared via a facile wet-chemical etching method. The SiNW displays acceptable stability and photocurrent density (J) of 1.1 mA.cm(-2) at 1.23 V versus (vs.) reversible hydrogen electrode (RHE) under solar irradiation, which are superior to the PSi and attributed to the improved surface area and light harvesting capability. Electrochemical impedance technique is employed to analyze the mechanism underlying the differences in PEC performance. A prototype PEC bio-sensor is fabricated using a SiNW electrode for detection of glutathione (GSH), leading to acceptable detect limit of 0.81 mu mol L-1(mu M) and sensitivity of 61.32 mA cm(-2) M-1. Further, it is found that both the PEC stability and photoresponse of SiNW electrodes could be enhanced efficiently by depositing thin Mo layers. Our studies demonstrated the prospect of Si as an electrode material for applying in the PEC or bio-sensing fields. (C) 2018 Elsevier B.V. All rights reserved.
机译：已经通过一种简便的湿化学刻蚀方法制备了具有两种不同形态的Si光电极，包括多孔Si（PSi）和Si纳米线（SiNWs）。 SiNW在1.23 V电压下相对于（vs.）可逆氢电极（RHE）在太阳照射下显示出可接受的稳定性和1.1 mA.cm（-2）的光电流密度（J），优于PSi并归因于表面改善面积和采光能力。电化学阻抗技术用于分析PEC性能差异的潜在机理。使用SiNW电极制造谷胱甘肽（GSH）的原型PEC生物传感器，导致可接受的0.81μmolL-1（μM）的检测限和61.32 mA cm（-2）M-1的灵敏度。此外，发现通过沉积薄的Mo层可以有效地增强SiNW电极的PEC稳定性和光响应性。我们的研究证明了将Si作为电极材料应用于PEC或生物传感领域的前景。 （C）2018 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2018年第1期|126-132|共7页
  • 作者

    Wang Linmeng; Gu Xiuquan; Zhao Yulong; Wei Meng; Huang Chunlai; Qiang Yinghuai;

  • 作者单位

    China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China;

    China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China;

    China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China;

    China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China;

    Jiangsu GCL Silicon Mat Technol Dev Co Ltd, Key Lab Silicon Based Elect Mat Jiangsu Prov, Xuzhou 221000, Jiangsu, Peoples R China;

    China Univ Min & Technol, Sch Mat Sci & Engn, Xuzhou 221116, Jiangsu, Peoples R China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    Si; Nanowires; Photoelectrochemical; Self-power; Bio-sensors; GSH;

    机译：硅;纳米线;光电化学;自功率;生物传感器;谷胱甘肽;

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