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首页> 外文期刊>Applied Surface Science >Copper circuit patterning on polymer using selective surface modification and electroless plating
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Copper circuit patterning on polymer using selective surface modification and electroless plating

机译：使用选择性表面改性和化学镀在聚合物上进行铜电路图案化

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We have examined a potential new and simple method for patterning a copper circuit on PET substrate by copper electroless plating, without the pretreatment steps (i.e., sensitization and activation) for electroless plating as well as the etching processes of conventional circuit patterning. A patterned mask coated with a catalyst material, Ag, for the reduction of Cu ions, is placed on a PET substrate. Subsequent oxygen plasma treatment of the PET substrate covered with the mask promotes the selective generation of anisotropic pillar- or hair-like nanostructures coated with co-deposited nanoparticles of the catalyst material on PET. After oxygen plasma treatment, a Cu circuit is well formed just by dipping the plasma treated PET into a Cu electroless plating solution. By increasing the oxygen gas pressure in the chamber, the height of the nanostructures increases and the Ag catalyst particles are coated on not only the top but also the side surfaces of the nanostructures. Strong mechanical interlocking between the Cu circuit and PET substrate is produced by the large surface area of the nanostructures, and enhances peel strength. Results indicate this new simple two step (plasma surface modification and pretreatment-free electroless plating) method can be used to produce a flexible Cu circuit with good adhesion. (C) 2016 Elsevier B.V. All rights reserved.
机译：我们已经研究了一种潜在的新颖而简单的方法，该方法可以通过化学镀铜在PET基板上的铜电路上形成图案，而无需进行化学镀的预处理步骤（即敏化和活化）以及常规电路图案的蚀刻工艺。将涂覆有催化剂材料Ag以减少Cu离子的图案化掩模置于PET基底上。随后用掩模覆盖的PET基材的氧等离子体处理促进了选择性涂层，该各向异性的柱状或头发状纳米结构被催化剂材料的纳米颗粒共沉积在PET上。在氧等离子体处理之后，仅通过将经等离子体处理的PET浸入Cu化学镀液中就可以很好地形成Cu电路。通过增加腔室中的氧气压力，纳米结构的高度增加并且Ag催化剂颗粒不仅被涂覆在纳米结构的顶部而且被涂覆在纳米结构的侧表面上。纳米结构的大表面积可在Cu电路和PET基板之间形成牢固的机械互锁，并提高剥离强度。结果表明，这种新的简单的两步法（等离子表面改性和无预处理化学镀）可用于生产具有良好附着力的柔性Cu电路。 （C）2016 Elsevier B.V.保留所有权利。

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