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Thermo-enhanced field emission from ZnO nanowires: Role of defects and application in a diode flat panel X-ray source

机译：ZnO纳米线的热增强场发射：缺陷的作用及其在二极管平板X射线源中的应用

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摘要

A thermo-enhanced field emission phenomenon was observed from ZnO nanowires. The field emission current increased by almost two orders of magnitude under a constant applied electric field, and the turn on field decreased from 6.04 MV/m to 5.0 MV/m when the temperature increased from 323 to 723 K. The Poole-Frenkel electron excitation from the defect-induced trapping centers to the conduction band under high electric fields is believed to be the primary cause of the observed phenomenon. The experimental results fit well with the proposed physical model. The field emission from ZnO nanowires with different defect concentrations further confirmed the role of defects. Using the thermo-enhanced field emission phenomenon, a diode flat panel X-ray source was demonstrated, for which the energy and dose can be separately tuned. The thermo-enhanced field emission phenomenon observed from ZnO nanoWires could be an effective way to realize a large area flat panel multi-energy X-ray source. (C) 2016 Elsevier B.V. All rights reserved.
机译：从ZnO纳米线观察到热增强的场发射现象。在恒定的施加电场下，场发射电流几乎增加了两个数量级，并且当温度从323 K升高到723 K时，开启磁场从6.04 MV / m降低到5.0 MV / m。Poole-Frenkel电子激发在高电场下从缺陷引起的俘获中心到导带的传导被认为是观察到现象的主要原因。实验结果与提出的物理模型非常吻合。具有不同缺陷浓度的ZnO纳米线的场发射进一步证实了缺陷的作用。利用热增强的场发射现象，证明了二极管平板X射线源，其能量和剂量可以分别调整。从ZnO纳米线观察到的热增强场发射现象可能是实现大面积平板多能量X射线源的有效途径。 （C）2016 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2017年第31期|337-345|共9页
  • 作者

    Zhang Zhipeng; Chen Daokun; Chen Wenqing; Chen Yicong; Song Xiaomeng; Zhan Runze; Deng Shaozhi; Xu Ningsheng; Chen Jun;

  • 作者单位

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO nanowires; Field emission; Temperature dependence; Defect-assisted emission; Poole-Frenkel effect; X-ray source;

    机译：ZnO纳米线;场发射;温度依赖性;缺陷辅助发射;Poole-Frenkel效应;X射线源;

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